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TSM060N03PQ33 RGG

Name: Taiwan Semiconductor TSM060N03PQ33 RGG
Brand: Taiwan Semiconductor
SKU: 821-TSM060N03PQ33RGG
Price: 0.86 EUR
Availability: InStock

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Mouser No:

821-TSM060N03PQ33RGG

Mfr. No:

TSM060N03PQ33 RGG

Mfr.:

Taiwan Semiconductor

Description:

MOSFETs 30V, 62A, Single N-Channel Power MOSFET

Datasheet:

TSM060N03PQ33 RGG Datasheet

ECAD Model:

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In Stock: 9 986

Stock:: 9 986 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	0,86 €	0,86 €
	0,53 €	5,30 €
	0,362 €	36,20 €
	0,285 €	142,50 €
	0,237 €	237,00 €
	0,219 €	547,50 €
Full Reel (Order in multiples of 5000)
	0,186 €	930,00 €
	0,183 €	1 830,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Taiwan Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PDFN33-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	15 A
Rds On - Drain-Source Resistance:	4.8 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	25.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	40 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Taiwan Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Fall Time:	9.6 ns
Product Type:	MOSFETs
Rise Time:	14.5 ns
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	35.2 ns
Typical Turn-On Delay Time:	7.5 ns
Part # Aliases:	TSM060N03PQ33
Unit Weight:	304,151 mg

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Filter Document:

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
MXHTS:: 85412999
ECCN:: EAR99

TSM060N03PQ33 N-Channel Power MOSFET

Taiwan Semiconductor TSM060N03PQ33 N-Channel Power MOSFET features a 30V drain-source voltage, 62A continuous drain current, and 6mΩ on-state resistance. The TSM060N03PQ33 MOSFET provides a low gate charge for fast power switching and minimizes conductive losses. Applications include DC-DC converters, battery power management, and O-ring FETs or load switches.