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NXVF6532M3TG01

Name: onsemi NXVF6532M3TG01
Brand: onsemi
SKU: 863-NXVF6532M3TG01
Price: 21.47 EUR
Availability: InStock

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Mouser No:

863-NXVF6532M3TG01

Mfr. No:

NXVF6532M3TG01

Mfr.:

onsemi

Description:

SiC MOSFETs SiC Power MOSFET Module 650V, 32mohm H-Bridge

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NXVF6532M3TG01 Datasheet

ECAD Model:

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In Stock: 48

Stock:: 48 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	21,47 €	21,47 €
	17,57 €	175,70 €
	15,52 €	1 552,00 €
25 000	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	APM-16
Transistor Polarity:	N-Channel
Number of Channels:	4 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	31 A
Rds On - Drain-Source Resistance:	44 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 C
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	58 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	65.2 W
Channel Mode:	Enhancement
Brand:	onsemi
Configuration:	Quad
Fall Time:	9.2 ns
Forward Transconductance - Min:	12 S
Packaging:	Tube
Product:	MOSFETs
Product Type:	SiC MOSFETS
Rise Time:	6 ns
Series:	NXVF6532M3TG01
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	4 N-Channel
Type:	Half Bridge
Typical Turn-Off Delay Time:	33.2 ns
Typical Turn-On Delay Time:	8.4 ns

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Datasheet

NXVF6532M3TG01 Datasheet

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

NXVF6532M3TG01 650V EliteSiC H-Bridge Power MOSFET

onsemi NXVF6532M3TG01 650V EliteSiC H-Bridge Power MOSFET Module is designed for demanding power conversion applications in automotive and industrial environments. Built with advanced Silicon Carbide (SiC) technology, the onsemi NXVF6532M3TG01 delivers superior efficiency, fast switching, and robust thermal performance. The module integrates four 32mΩ SiC MOSFETs in an H-Bridge configuration, making the device ideal for use in onboard chargers (OBCs), DC-DC converters, and electric vehicle (EV) powertrain systems. Housed in a compact APM16 package with integrated temperature sensing, the component supports high power density and reliable thermal management. The NXVF6532M3TG01 is AEC-Q101/Q200 and AQG324 qualified, ensuring automotive-grade reliability and performance in harsh operating conditions.