Results: 119
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
Infineon Technologies MOSFETs LOW POWER_NEW
2 376Expected 13/08/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 7 A 640 mOhms - 20 V, 20 V 2.5 V 17 nC - 55 C + 150 C 27 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW
7 500Expected 01/06/2026
Min.: 1
Mult.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 6 A 770 mOhms - 20 V, 20 V 2.5 V 15 nC - 55 C + 150 C 45 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFETs LOW POWER_NEW
16 975On Order
Min.: 1
Mult.: 1
: 3 000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 800 V 4 A 1.2 Ohms - 20 V, 20 V 2.5 V 10 nC - 55 C + 150 C 7 W Enhancement CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFETs HIGH POWER_NEW
3 520On Order
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 37 A 69 mOhms - 20 V, 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs CONSUMER
999Expected 30/07/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 6 A 490 mOhms - 20 V, 20 V 3 V 9 nC - 40 C + 150 C 21 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW
266Expected 16/07/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 770 mOhms - 20 V, 20 V 2.5 V 15 nC - 55 C + 150 C 26 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs CONSUMER
3 200Expected 28/01/2027
Min.: 1
Mult.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 12 A 214 mOhms - 20 V, 20 V 3 V 18 nC - 40 C + 150 C 53 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs HIGH POWER_NEW
1 000On Order
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 20 A 160 mOhms - 20 V, 20 V 3.5 V 31 nC - 55 C + 150 C 81 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW
350Expected 25/02/2027
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 4 A 1.4 Ohms - 30 V, 30 V 3 V 10 nC - 50 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
220Expected 23/07/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 61 A 45 mOhms - 20 V, 20 V 3.5 V 90 nC - 55 C + 150 C 201 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
227Expected 01/06/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 48 A 49 mOhms - 20 V, 20 V 3 V 67 nC - 55 C + 150 C 164 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
240Expected 27/08/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 31 A 77 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 117 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 3 A 1.7 Ohms - 20 V, 20 V 2.5 V 9 nC - 55 C + 150 C 24 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW Non-Stocked Lead-Time 39 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 950 V 9 A 750 mOhms - 20 V, 20 V 2.5 V 23 nC - 55 C + 150 C 28 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW Non-Stocked Lead-Time 15 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 13 A 310 mOhms - 30 V, 30 V 2.5 V 30 nC - 55 C + 150 C 30 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW Lead-Time 39 Weeks
Min.: 1
Mult.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 9 A 305 mOhms - 20 V, 20 V 3 V 13 nC - 55 C + 150 C 41 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs LOW POWER_NEW Non-Stocked Lead-Time 19 Weeks
Min.: 1 500
Mult.: 1 500

Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 8 A 510 mOhms - 20 V, 20 V 2.5 V 20 nC - 55 C + 150 C 60 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW Non-Stocked Lead-Time 39 Weeks
Min.: 240
Mult.: 240

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 37 A 69 mOhms - 20 V, 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs LOW POWER_NEW Non-Stocked Lead-Time 18 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 13 A 310 mOhms - 20 V, 20 V 2.5 V 30 nC - 55 C + 150 C 84 W Enhancement CoolMOS Tube