It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

SQS660CENW-T1_GE3

Name: Vishay SQS660CENW-T1_GE3
Brand: Vishay / Siliconix
SKU: 78-SQS660CENW-T1_GE3
Price: 1.14 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

78-SQS660CENW-T1_GE3

Mfr. No:

SQS660CENW-T1_GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET

Datasheet:

SQS660CENW-T1_GE3 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Vishay / Siliconix SQS660CENW-T1_GE3

In Stock: 60 078

Stock:: 60 078 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 30 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,14 €	1,14 €
	0,719 €	7,19 €
	0,476 €	47,60 €
	0,372 €	186,00 €
	0,338 €	338,00 €
Full Reel (Order in multiples of 3000)
	0,295 €	885,00 €
	0,28 €	1 680,00 €
	0,274 €	2 466,00 €
	0,268 €	6 432,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-1212-8W
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	18 A
Rds On - Drain-Source Resistance:	11.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	17.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	62.5 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	5 ns
Forward Transconductance - Min:	26 S
Product Type:	MOSFETs
Rise Time:	4 ns
Series:	SQS
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	TrenchFET Power MOSFET
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	12 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SQS660CENW-T1_GE3 Datasheet

Models

R-C Thermal Model Parameters

Technical Resources

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

SQS660CENW Automotive N-Ch 60V MOSFET

Vishay / Siliconix SQS660CENW Automotive N-Ch 60V MOSFET is an AEC-Q101 qualified TrenchFET^® power MOSFET. The SQS660CENW is specified at 18A I_D and 60V V_DS. The single configuration device is offered in a PowerPAK^® 1212-8W package with an operating junction and storage temperature range of -55°C to +175°C.