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NTBG040N120M3S

Name: onsemi NTBG040N120M3S
Brand: onsemi
SKU: 863-NTBG040N120M3S
Price: 9.05 EUR
Availability: InStock

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Mouser No:

863-NTBG040N120M3S

Mfr. No:

NTBG040N120M3S

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS D2PAK-7L 40MOHM 1200V M3

Datasheet:

NTBG040N120M3S Datasheet

ECAD Model:

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More Information

Learn more about onsemi NTBG040N120M3S

In Stock: 7

Stock:: 7 Can Dispatch Immediately

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Factory Lead Time:: 21 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	9,05 €	9,05 €
	6,32 €	63,20 €
	5,19 €	519,00 €
	4,87 €	2 435,00 €
Full Reel (Order in multiples of 800)
	4,87 €	3 896,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	51 A
Rds On - Drain-Source Resistance:	52 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.4 V
Qg - Gate Charge:	70 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	329 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	10 ns
Forward Transconductance - Min:	13 S
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	SiC MOSFETS
Rise Time:	16 ns
Series:	NTBG040N120M3S
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	24 ns
Typical Turn-On Delay Time:	11 ns

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Datasheet

NTBG040N120M3S Datasheet

PCN

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

M3S EliteSiC MOSFETs

onsemi M3S EliteSiC MOSFETs are solutions for high-frequency switching applications that employ hard-switched topologies. The onsemi M3S MOSFETs are designed to optimize performance and efficiency. The device has a remarkable ~40% reduction in total switching losses (Etot) compared to the 1200V 20mΩ M1 counterparts. The M3S EliteSiC MOSFETs are perfectly suited for various applications, including solar power systems, onboard chargers, and electric vehicle (EV) charging stations.

NTBG022N120M3S 1200V M3S Series SiC MOSFET

onsemi NTBG022N120M3S 1200V M3S Series SiC (Silicon Carbide) MOSFET is optimized for fast switching applications and offers a low 22mΩ drain-to-source on-resistance. The M3S Series SiC MOSFETs provide optimum performance when driven with an 18V gate drive but also work well with a 15V gate drive. This device features planar technology, which works reliably with a negative gate voltage drive and turns off spikes on the gate.