NV60x GaNFast™ Power FETs

Navitas Semiconductor NV60x GaNFast™ Power FETs are high‑performance enhancement‑mode GaN power devices engineered for fast‑switching, high‑efficiency power systems. These FETs feature ultra‑low gate charge, zero reverse‑recovery behavior, and minimized output charge, enabling high‑frequency operation up to 10MHz across the series. The Navitas Semiconductor NV60x supports 700V continuous and 800V transient drain‑to‑source voltages, providing robust headroom for demanding AC‑DC, DC‑DC, and DC‑AC topologies.

Results: 8
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 Mfr.
Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Navitas Semiconductor GaN FETs GaNFast Discrete 650V 260mOhm PQFN 56
Datasheet
788In Stock
Min.: 1
Mult.: 1
: 1 000

SMD/SMT PQFN-8 800 V 5 A 364 mOhms - 10 V, 7 V 2.8 V 1.5 nC - 55 C + 150 C
Navitas Semiconductor GaN FETs GaNFast Discrete 650V 150mOhm PQFN 56
Datasheet
788In Stock
Min.: 1
Mult.: 1
: 1 000

SMD/SMT PQFN-8 800 V 8 A 190 mOhms - 10 V, 7 V 2.6 V 2.4 nC - 55 C + 150 C 57 W
Navitas Semiconductor GaN FETs GaNFET Discrete 650V 120mOhm PQFN 56
Datasheet
739In Stock
Min.: 1
Mult.: 1
: 1 000

SMD/SMT PQFN-8 800 V 13 A 170 mOhms - 10 V, 7 V 2.8 V 2.6 nC - 55 C + 150 C
Navitas Semiconductor GaN FETs GaNFast Discrete 650V 450mOhm PQFN 56
Datasheet
777In Stock
Min.: 1
Mult.: 1
: 1 000

SMD/SMT QFN-8 700 V 2.7 A 600 mOhms - 10 V, 7 V 2.8 V 0.85 nC - 55 C + 150 C 25.4 W
Navitas Semiconductor GaN FETs GaNFast Discrete 650V 450mOhm PQFN 56
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 5 000
Mult.: 5 000
: 5 000

SMD/SMT QFN-8 700 V 2.7 A 600 mOhms - 10 V, 7 V 2.8 V 0.85 nC - 55 C + 150 C 25.4 W
Navitas Semiconductor GaN FETs GaNFast Discrete 650V 260mOhm PQFN 56
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 5 000
Mult.: 5 000
: 5 000

SMD/SMT PQFN-8 800 V 5 A 364 mOhms - 10 V, 7 V 2.8 V 1.5 nC - 55 C + 150 C
Navitas Semiconductor GaN FETs GaNFast Discrete 650V 150mOhm PQFN 56
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 5 000
Mult.: 5 000
: 5 000

SMD/SMT PQFN-8 800 V 8 A 190 mOhms - 10 V, 7 V 2.6 V 2.4 nC - 55 C + 150 C 57 W
Navitas Semiconductor GaN FETs GaNFET Discrete 650V 120mOhm PQFN 56
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 5 000
Mult.: 5 000
: 5 000

SMD/SMT PQFN-8 800 V 13 A 170 mOhms - 10 V, 7 V 2.8 V 2.6 nC - 55 C + 150 C