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UCC27332QDGNRQ1

Name: Texas Instruments UCC27332QDGNRQ1
Brand: Texas Instruments
SKU: 595-UCC27332QDGNRQ1
Price: 1.75 EUR
Availability: InStock

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Mouser No:

595-UCC27332QDGNRQ1

Mfr. No:

UCC27332QDGNRQ1

Mfr.:

Texas Instruments

Description:

Gate Drivers Automotive 9-A/9-A s ingle-channel gate

Datasheet:

UCC27332QDGNRQ1 Datasheet

ECAD Model:

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Learn more about Texas Instruments UCC27332QDGNRQ1

In Stock: 816

Stock:: 816 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,75 €	1,75 €
	1,29 €	12,90 €
	1,18 €	29,50 €
	1,05 €	105,00 €
	0,989 €	247,25 €
	0,955 €	477,50 €
	0,929 €	929,00 €
	0,886 €	2 215,00 €
	0,869 €	4 345,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Gate Drivers
RoHS:
Product:	Low-Side Drivers
Type:	Low-Side
Mounting Style:	SMD/SMT
Package/Case:	HVSSOP-8
Number of Drivers:	1 Driver
Number of Outputs:	2 Output
Output Current:	9 A, 9 A
Supply Voltage - Min:	4.5 V
Supply Voltage - Max:	18 V
Configuration:	Non-Inverting
Rise Time:	16 ns
Fall Time:	11 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	UCC27332
Brand:	Texas Instruments
Logic Type:	TTL
Operating Supply Current:	150 uA, 3.9 mA
Output Voltage:	0 V to 18 V
Product Type:	Gate Drivers
Propagation Delay - Max:	60 ns, 65 ns
Shutdown:	No Shutdown
Factory Pack Quantity:	2500
Subcategory:	PMIC - Power Management ICs
Technology:	Si

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Datasheet

UCC27332QDGNRQ1 Datasheet

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CNHTS:: 8542399000
CAHTS:: 8542390000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

UCC27332-Q1 High-Speed Low-Side Gate Driver

Texas Instruments UCC27332-Q1 Single Channel High-Speed Low-Side Gate Driver can effectively drive MOSFET and GaN power switches. UCC27332-Q1 has a typical peak drive strength of 9A, which reduces the rise and fall times of the power switches, lowering switching losses and increasing efficiency. The UCC27332-Q1 device’s small propagation delay yields better power stage efficiency by improving the dead time optimization, control loop response, pulse width utilization, and transient performance of the system.