QPD1026L

Qorvo
772-QPD1026L
QPD1026L

Mfr.:

Description:
GaN FETs 1500W, 65V,GaN pre-matched, 442(+/-5) MH

Datasheet:
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In Stock: 7

Stock:
7 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 7 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
1 489,24 € 1 489,24 €

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: GaN FETs
RoHS:  
Brand: Qorvo
Maximum Operating Frequency: 450 MHz
Minimum Operating Frequency: 420 MHz
Moisture Sensitive: Yes
Output Power: 1.5 kW
Packaging: Waffle
Product Type: GaN FETs
Series: QPD1026L
Factory Pack Quantity: 18
Subcategory: Transistors
Technology: GaN
Transistor Type: HEMT
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Datasheet

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USHTS:
8541497080
ECCN:
EAR99

QPD1026L GaN RF Input-Matched Transistor

Qorvo QPD1026L GaN RF Input-Matched Transistor is a 1300W (P3dB) discrete Gallium Nitride on Silicon Carbide High-Electron Mobility Transistor (GaN on SiC HEMT) operating from 420MHz to 450MHz. The QPD1026L provides a linear gain of 25.9dB at 440MHz. Input prematch within the package results in easier external board matching, saving board space. The device supports both continuous wave and pulsed operations.

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