Power Silicon Carbide Schottky Diodes

Vishay Semiconductors Power Silicon Carbide (SiC) Schottky Diodes are advanced, high‑performance rectifiers designed to deliver exceptional efficiency, ruggedness, and reliability in demanding power‑electronics applications. Built on wide-band-gap SiC technology, these Vishay diodes offer virtually zero reverse‑recovery charge, extremely fast switching capability, and temperature‑invariant performance, making the devices ideal for next‑generation high‑frequency power conversion systems.

Results: 45
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Configuration If - Forward Current Vrrm - Repetitive Reverse Voltage Vf - Forward Voltage Ifsm - Forward Surge Current Ir - Reverse Current Minimum Operating Temperature Maximum Operating Temperature Series
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2202L
1 000Expected 16/03/2026
Min.: 1
Mult.: 1

Through Hole TO-220AC-2 SIngle 30 A 650 V 1.33 V 180 A 125 uA - 55 C + 175 C VS-4C30ET07T-M3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2202L
1 000Expected 16/03/2026
Min.: 1
Mult.: 1

Through Hole TO-220AC-2 SIngle 30 A 650 V 1.33 V 180 A 125 uA - 55 C + 175 C VS-4C30ET07THM3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Expected 14/08/2026
Min.: 1
Mult.: 1

TO-263AB-2 Single 30 A 1.2 kV 1.36 V 144 A 550 uA - 55 C + 175 C VS-4C30ET12S2L-M3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Expected 14/08/2026
Min.: 1
Mult.: 1

TO-263AB-2 Single 30 A 1.2 kV 1.36 V 144 A 550 uA - 55 C + 175 C VS-4C30ET12S2LHM3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2202L
1 000Expected 14/08/2026
Min.: 1
Mult.: 1

Through Hole TO-220AC-2 Single 30 A 1.2 kV 1.36 V 144 A 550 uA - 55 C + 175 C VS-4C30ET12T-M3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2202L
1 000Expected 14/08/2026
Min.: 1
Mult.: 1

Through Hole TO-220AC-2 Single 30 A 1.2 kV 1.36 V 144 A 550 uA - 55 C + 175 C VS-4C30ET12THM3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2473L
500Expected 16/03/2026
Min.: 1
Mult.: 1

Through Hole TO-247AD-3 Common Cathode 20 A 650 V 1.33 V 125 A 110 uA - 55 C + 175 C VS-4C40CP07L-M3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2473L
500Expected 16/03/2026
Min.: 1
Mult.: 1

Through Hole TO-247AD-3 Common Cathode 20 A 650 V 1.33 V 125 A 110 uA - 55 C + 175 C VS-4C40CP07LHM3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Expected 06/03/2026
Min.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 6 A 650 V 1.3 V 39 A 35 uA - 55 C + 175 C 4C06ET07S2L-M3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Expected 06/03/2026
Min.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 6 A 650 V 1.3 V 39 A 35 uA - 55 C + 175 C 4C06ET07S2LHM3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
780Expected 14/08/2026
Min.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 8 A 650 V 1.3 V 51 A 41 uA - 55 C + 175 C 4C08ET07S2L-M3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Expected 14/08/2026
Min.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 8 A 650 V 1.3 V 51 A 41 uA - 55 C + 175 C 4C08ET07S2LHM3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2202L
1 000Expected 14/08/2026
Min.: 1
Mult.: 1

Through Hole TO-220AC-2 Single 8 A 650 V 1.3 V 51 A 41 uA - 55 C + 175 C VS-4C08ET07THM3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2202L
1 000Expected 14/08/2026
Min.: 1
Mult.: 1

Through Hole TO-220AC-2 Single 8 A 650 V 1.3 V 51 A 41 uA - 55 C + 175 C VS-4C08ET07THM3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2472L
500Expected 14/08/2026
Min.: 1
Mult.: 1

Through Hole TO-247AD-2 Single 10 A 1.2 kV 1.34 V 50 A 162 uA - 55 C + 175 C VS-4C10EP12L-M3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Expected 14/08/2026
Min.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 12 A 650 V 1.3 V 72 A 84 uA -55 C + 175 C VS-4C12ET07S2L-M3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2202L
1 000Expected 14/08/2026
Min.: 1
Mult.: 1

Through Hole TO-220AC-2 Single 12 A 650 V 1.3 V 72 A 84 uA -55 C + 175 C VS-4C12ET07T-M3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2472L
500Expected 14/08/2026
Min.: 1
Mult.: 1

Through Hole TO-247AD-2 Single 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C VS-4C16EP07L-M3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2472L
500Expected 14/08/2026
Min.: 1
Mult.: 1

Through Hole TO-247AD-2 Single 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C VS-4C16EP07LHM3
Vishay Semiconductors SiC Schottky Diodes SicG4TO-2473L
500Expected 06/03/2026
Min.: 1
Mult.: 1

Through Hole TO-247AD-3 Common Cathode 10 A 650 V 1.3 V 60 A 50 uA - 55 C + 175 C VS-4C20CP07L-M3