650V Automotive GaN Transistors - Bottom Cooled

Infineon Technologies 650V Automotive GaN Transistors - Bottom Cooled allows for high current, voltage breakdown, and switching frequency. Infineon Technologies transistors innovate with patented Island Technology® and GaNPX® packaging. Island Technology cell layout realizes high current die and high yield. GaNPX packaging enables low inductance and low thermal resistance in a small package. The GS-065-060-5-B-A is a bottom-side cooled transistor that offers low junction-to-case thermal resistance for demanding high-power applications. These features combine to provide high-efficiency power switching.