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RH7L04CBJFRATCB

Name: ROHM Semiconductor RH7L04CBJFRATCB
Brand: ROHM Semiconductor
SKU: 755-RH7L04CBJFRATCB
Price: 1.69 EUR
Availability: InStock

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Mouser No:

755-RH7L04CBJFRATCB

Mfr. No:

RH7L04CBJFRATCB

Mfr.:

ROHM Semiconductor

Description:

MOSFETs DFN8 P CHAN 60V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

RH7L04CBJFRATCB Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RH7L04CBJFRATCB

In Stock: 616

Stock:: 616

Can Dispatch Immediately

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On Order:: 3 000

Expected 04/06/2026
Factory Lead Time:: 16

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,69 €	1,69 €
	1,08 €	10,80 €
	0,73 €	73,00 €
	0,58 €	290,00 €
	0,532 €	532,00 €
Full Reel (Order in multiples of 3000)
	0,507 €	1 521,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-8
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	36 A
Rds On - Drain-Source Resistance:	41 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 5 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	35 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	62 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	32 ns
Product Type:	MOSFETs
Rise Time:	18 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	125 ns
Typical Turn-On Delay Time:	13 ns

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Datasheet

RH7L04CBJFRATCB Datasheet

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

RH7L04CBJFRA -60V P-Channel Power MOSFET

ROHM Semiconductor RH7L04CBJFRA -60V P-Channel Power MOSFET is a -60V drain-source voltage (V_DSS) and ±36A continuous drain current (I_D) rated automotive-grade MOSFET that is AEC-Q101 qualified. The drain-source on-state resistance [R_DS(ON)] is 41mΩ (max.) (V_GS = -10V, I_D = -20A) and comes in a 3.3mm x 3.3mm DFN-8 (DFN3333T8LSAB) package. The ROHM Semiconductor RH7L04CBJFRA MOSFET is ideal for Advanced Driver Assistance Systems (ADAS), information, lighting, and body applications.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.