AFGBG70T65SQDC

onsemi
863-AFGBG70T65SQDC
AFGBG70T65SQDC

Mfr.:

Description:
IGBTs FS4 70A HIGH SPEED CO-PACK WITH SIC DIODE 20A GEN1.5

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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Product Attribute Attribute Value Select Attribute
onsemi
Product Category: IGBTs
RoHS:  
SiC
D2PAK-7
SMD/SMT
Single
1.54 V
20 V
75 A
617 W
- 55 C
+ 175 C
AFGBG70T65SQDC
Reel
Cut Tape
Brand: onsemi
Continuous Collector Current Ic Max: 70 A
Gate-Emitter Leakage Current: 400 nA
Product Type: IGBTs
Factory Pack Quantity: 800
Subcategory: Transistors
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Attributes selected: 0

Compliance Codes
TARIC:
8541210000
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
MXHTS:
8541210100
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
Korea, Republic of
The country is subject to change at the time of shipment.

AFGBG70T65SQDC N-Channel Field Stop IV IGBT

onsemi AFGBG70T65SQDC N-Channel Field Stop IV High Speed IGBT uses the novel field stop 4th generation IGBT technology and Generation 1.5 SiC Schottky Diode technology. This 650V collector-to-emitter (VCES) rated IGBT comes in a D2PAK7 package. It is rated at 1.54V collector-to-emitter saturation voltage (VCE(SAT)) and a collector current (IC) of 70A. The onsemi AFGBG70T65SQDC offers optimal performance with both low conduction and switching losses, enabling high efficiency in various applications.

In Stock: 720

Stock:
720 Can Dispatch Immediately
Factory Lead Time:
17 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1   Maximum: 80
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
8,63 € 8,63 €
5,93 € 59,30 €
Full Reel (Order in multiples of 800)
5,93 € 4 744,00 €