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SIZF300DT-T1-GE3

Name: Vishay SIZF300DT-T1-GE3
Brand: Vishay Semiconductors
SKU: 78-SIZF300DT-T1-GE3
Price: 1.63 EUR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

78-SIZF300DT-T1-GE3

Mfr. No:

SIZF300DT-T1-GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs 30V Vds; 16/-12V Vgs PowerPAIR F 3.3x3.3

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

SIZF300DT-T1-GE3 Datasheet

ECAD Model:

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 39 Weeks Estimated factory production time.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,63 €	1,63 €
	1,08 €	10,80 €
	0,792 €	79,20 €
	0,649 €	324,50 €
	0,568 €	568,00 €
Full Reel (Order in multiples of 3000)
	0,469 €	1 407,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAIR3x3-4
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	75 A, 141 A
Rds On - Drain-Source Resistance:	4.5 mOhms, 1.84 mOhms
Vgs - Gate-Source Voltage:	- 16 V, - 12 V, 16 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V, 1.1 V
Qg - Gate Charge:	22 nC, 62 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	74 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Dual
Fall Time:	7 ns, 12 ns
Forward Transconductance - Min:	60 S, 90 S
Product Type:	MOSFETs
Rise Time:	40 ns, 53 ns
Series:	SIZ
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	23 ns, 30 ns
Typical Turn-On Delay Time:	17 ns, 25 ns
Unit Weight:	143,050 mg

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Filter Document:

Datasheet

SIZF300DT-T1-GE3 Datasheet

Application Notes

Technical Resources

REACH Certificate (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Integrated MOSFET Solutions

Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density and efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

PowerPAIR® Dual-MOSFETs

Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged Vishay PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency.