IXGA20N250HV

IXYS
576-IXGA20N250HV
IXGA20N250HV

Mfr.:

Description:
IGBTs Disc IGBT NPT-Very Hi Voltage TO-263D2

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about IXYS IXGA20N250HV

Availability

Stock:
Non-Stocked
Factory Lead Time:
26 Weeks Estimated factory production time.
Long lead time reported on this product.
Minimum: 300   Multiples: 50
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
12,40 € 3 720,00 €

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: IGBTs
RoHS:  
Si
SMD/SMT
Single
2.5 kV
3.1 V
- 20 V, 20 V
30 A
150 W
- 55 C
+ 150 C
Tube
Brand: IXYS
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: KR
Product Type: IGBT Transistors
Factory Pack Quantity: 50
Subcategory: IGBTs
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

This functionality requires JavaScript to be enabled.

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
MXHTS:
8541299900
ECCN:
EAR99

IXGA20N250HV High Voltage IGBT

IXYS IXGA20N250HV High Voltage IGBT (Insulated Gate Bipolar Transistor) provides a square Reverse Bias Safe Operating Area (RBSOA) and 10µs short circuit withstanding capability. The IXGA20N250HV features 2500V collector-to-emitter voltage, 12A collector current at +110°C, and 3.1V collector-emitter saturation voltage. The device has a positive temp coefficient of VCE(sat), ideal for paralleling.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.