SIA427DJ-T1-GE3

Vishay Semiconductors
781-SIA427DJ-T1-GE3
SIA427DJ-T1-GE3

Mfr.:

Description:
MOSFETs 8V 12A 19W 13mohms @ 4.5V

Datasheet:
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Learn more about Vishay Semiconductors SIA427DJ-T1-GE3

In Stock: 62 486

Stock:
62 486 Can Dispatch Immediately
Factory Lead Time:
7 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
0,929 € 0,93 €
0,664 € 6,64 €
0,413 € 41,30 €
0,285 € 142,50 €
0,253 € 253,00 €
Full Reel (Order in multiples of 3000)
0,215 € 645,00 €
0,184 € 1 104,00 €
0,171 € 1 539,00 €
0,154 € 3 696,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
SC-70-6
P-Channel
1 Channel
8 V
12 A
95 mOhms
- 5 V, 5 V
800 mV
50 nC
- 55 C
+ 150 C
19 W
Enhancement
TrenchFET
Reel
Cut Tape
MouseReel
Brand: Vishay Semiconductors
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Product Type: MOSFETs
Series: SIA
Factory Pack Quantity: 3000
Subcategory: Transistors
Part # Aliases: SIA427DJ-GE3
Unit Weight: 11,688 g
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Attributes selected: 0

Datasheet

PCN

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

SiA427DJ 8V TrenchFET® Power MOSFETs

Vishay Semiconductors SiA427DJ 8V TrenchFET® Power MOSFETs have the lowest on-resistance for a p-channel device in the thermally enhanced PowerPAK® SC-70 2mm by 2mm footprint area. The on-resistance of the SiA427DJ is up to 47% lower than the closest competing p-channel device. The 1.2V low on-resistance rating of SiA427DJ TrenchFET power MOSFETs makes them ideal for low bus voltages.

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