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SIA906EDJ-T1-GE3

Name: Vishay SIA906EDJ-T1-GE3
Brand: Vishay Semiconductors
SKU: 781-SIA906EDJ-GE3
Price: 1.01 EUR
Availability: InStock

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Mouser No:

781-SIA906EDJ-GE3

Mfr. No:

SIA906EDJ-T1-GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs 20V Vds 12V Vgs PowerPAK SC-70

Datasheet:

SIA906EDJ-T1-GE3 Datasheet

ECAD Model:

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In Stock: 35 577

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,01 €	1,01 €
	0,716 €	7,16 €
	0,446 €	44,60 €
	0,308 €	154,00 €
	0,273 €	273,00 €
Full Reel (Order in multiples of 3000)
	0,232 €	696,00 €
	0,205 €	1 230,00 €
	0,185 €	1 665,00 €
	0,166 €	3 984,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SC-70-6
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	4.5 A
Rds On - Drain-Source Resistance:	46 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	600 mV
Qg - Gate Charge:	950 pC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	7.8 W
Channel Mode:	Enhancement
Tradename:	TrenchFET, PowerPAK
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Dual
Fall Time:	12 ns
Forward Transconductance - Min:	14 S
Product Type:	MOSFETs
Rise Time:	18 ns
Series:	SIA
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	12 ns
Typical Turn-On Delay Time:	10 ns
Part # Aliases:	SIA906EDJ-GE3
Unit Weight:	28 mg

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Datasheet

SIA906EDJ-T1-GE3 Datasheet

Models

PCN

Technical Resources

REACH Certificate (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

SiA906EDJ Dual N-Channel MOSFET

Vishay Siliconix SiA906EDJ Dual N-Channel MOSFET is designed to save space and increase power efficiency in portable electronics. It features the industry's lowest on-resistance for 20V (12V V_GS) devices at 4.5V gate drives in the 2x2mm footprint area.

Integrated MOSFET Solutions

Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density and efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.