IPW60R037CSFDXKSA1

Infineon Technologies
726-IPW60R037CSFDXKS
IPW60R037CSFDXKSA1

Mfr.:

Description:
MOSFETs HIGH POWER_NEW

ECAD Model:
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In Stock: 197

Stock:
197 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
7,94 € 7,94 €
4,68 € 46,80 €
3,96 € 396,00 €
3,85 € 1 848,00 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
54 A
37 mOhms
- 20 V, 20 V
3.5 V
136 nC
- 55 C
+ 150 C
245 W
Enhancement
Tube
Brand: Infineon Technologies
Configuration: Single
Fall Time: 6 ns
Product Type: MOSFETs
Rise Time: 30 ns
Factory Pack Quantity: 240
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 196 ns
Typical Turn-On Delay Time: 53 ns
Part # Aliases: IPW60R037CSFD SP001927820
Unit Weight: 6 g
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TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

IPW60R037CSFD CoolMOS™ Superjunction MOSFET

Infineon Technologies IPW60R037CSFD CoolMOS™ Superjunction MOSFET is optimized to address the off-board EV-charging market segment. The device has a low gate charge (Qg) and improved switching behavior with high efficiency. The device features an integrated fast body diode that tremendously reduces reverse recovery charge (Qrr), leading to high reliability in resonant topologies. Infineon IPW60R037CSFD meets efficiency and reliability standards of off-board EV charging and supports high-power density solutions.