QPA1009D

Qorvo
772-QPA1009D
QPA1009D

Mfr.:

Description:
RF Amplifier 10.7 - 12.7 GHz, 17.5 W GaN Amp

Datasheet:
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Learn more about Qorvo QPA1009D
This product may require additional documentation to export from the United States.

Availability

Stock:
Non-Stocked
Factory Lead Time:
20 Weeks Estimated factory production time.
Minimum: 10   Multiples: 10
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
318,15 € 3 181,50 €
298,07 € 8 942,10 €

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: RF Amplifier
Delivery Restrictions:
 This product may require additional documentation to export from the United States.
RoHS:  
10.7 GHz to 12.7 GHz
20 V
600 mA
22.1 dB
Power Amplifiers
SMD/SMT
Die
GaN
- 40 C
+ 85 C
QPA1009D
Gel Pack
Brand: Qorvo
Development Kit: 1140794
Input Return Loss: 27 dB
Number of Channels: 1 Channel
Pd - Power Dissipation: 59.5 W
Product Type: RF Amplifier
Factory Pack Quantity: 10
Subcategory: Wireless & RF Integrated Circuits
Test Frequency: 12.7 GHz
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Attributes selected: 0

Datasheet

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TARIC:
8542330000
CAHTS:
8542330000
USHTS:
8542330001
MXHTS:
8542330299
ECCN:
3A001.b.2.b.2

QPA1009D Wide Band Power Amplifier MMIC

Qorvo QPA1009D Wide Band Power Amplifier MMIC is fabricated on Qorvo production 0.15μm GaN on SiC process (QGaN15). The QPA1006D covers the 10.7GHz to 12.7GHz range and provides >17.5W saturated output power. The device also provides >17dB large-signal gain while achieving >40% power-added efficiency. The QPA1009D RF input port is DC coupled to the ground for optimum ESD performance. The QPA1009D RF ports have DC-blocking capacitors and are matched to 50Ω. The QPA1006D can support a wide range of operating conditions, including CW operation, ideal for commercial and military systems. The device is lead-free and RoHS-compliant.

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