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SQSA12CENW-T1_GE3

Name: Vishay SQSA12CENW-T1_GE3
Brand: Vishay / Siliconix
SKU: 78-SQSA12CENW-T1_GE3
Price: 1.43 EUR
Availability: InStock

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See Product Specifications

Mouser No:

78-SQSA12CENW-T1_GE3

Mfr. No:

SQSA12CENW-T1_GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs N-CHANNEL 100-V (D-S) 175C MOSFET

Datasheet:

SQSA12CENW-T1_GE3 Datasheet

ECAD Model:

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Learn more about Vishay / Siliconix SQSA12CENW-T1_GE3

In Stock: 74

Stock:: 74

Can Dispatch Immediately

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On Order:: 3 000

Expected 24/12/2026
Factory Lead Time:: 29

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,43 €	1,43 €
	0,886 €	8,86 €
	0,579 €	57,90 €
	0,455 €	227,50 €
	0,389 €	389,00 €
Full Reel (Order in multiples of 3000)
	0,353 €	1 059,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-1212-8W
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	18 A
Rds On - Drain-Source Resistance:	22 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	31 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	62.5 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	9 ns
Forward Transconductance - Min:	47 S
Product Type:	MOSFETs
Rise Time:	4 ns
Series:	SQS
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	TrenchFET Power MOSFET
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	11 ns

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Datasheet

SQSA12CENW-T1_GE3 Datasheet

Models

R-C Thermal Model Parameters

Technical Resources

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

SQSA12CENW Automotive N-Ch 100V MOSFET

Vishay / Siliconix SQSA12CENW Automotive N-Ch 100V MOSFET is an AEC-Q101 qualified TrenchFET^® power MOSFET. The SQSA12CENW MOSFET features an 18A I_D, 100V V_DS, and 0.022Ω R_DS(on). The Vishay / Siliconix SQSA12CENW Automotive N-Ch 100V MOSFET is available in a single PowerPAK^® 1212-8W package and is specified to a -55°C to +175°C operating junction and storage temperature range.