CoolSiC™ Automotive 1700V MOSFETs

Infineon Technologies CoolSiC™ Automotive 1700V MOSFETs enable flyback topologies for auxiliary power supplies and DC-DC converters. These devices have continuous DC drain current (IDDC) for Rth(j-c,max) between 7.4A and 15A at 25°C and between 5.6A and 10.5A at 100°C. The Infineon Technologies SiC Trench MOSFET technology offers 0V/20V gate-source voltage driving, compatible with most flyback controllers for automotive applications.

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 Mfr.
Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Infineon Technologies SiC MOSFETs Automotive CoolSiC MOSFET 1700 V in D2PAK
Datasheet
525In Stock
Min.: 1
Mult.: 1
: 1 000

SMD/SMT PG-TO263-7-U01 N-Channel 1 Channel 1.7 kV 7.4 A 752 mOhms - 10 V, + 23 V 5.7 V 14 nC - 55 C + 175 C 105 W Enhancement
Infineon Technologies SiC MOSFETs Automotive CoolSiC MOSFET 1700 V in D2PAK
Datasheet
750On Order
Min.: 1
Mult.: 1
: 1 000

SMD/SMT PG-TO263-7-U01 N-Channel 1 Channel 1.7 kV 15 A 340 mOhms - 10 V, + 23 V 5.7 V 22.5 nC - 55 C + 175 C 142 W Enhancement
Infineon Technologies SiC MOSFETs Automotive CoolSiC MOSFET 1700 V in D2PAK
Datasheet
750On Order
Min.: 1
Mult.: 1
: 1 000

SMD/SMT PG-TO263-7-U01 N-Channel 1 Channel 1.7 kV 11.2 A 485 mOhms - 10 V, + 23 V 5.7 V 17.5 nC - 55 C + 175 C 118 W Enhancement