TGA2222

Qorvo
772-TGA2222
TGA2222

Mfr.:

Description:
RF Amplifier GaN Amplifier

ECAD Model:
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In Stock: 10

Stock:
10 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 10   Multiples: 10
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
622,94 € 6 229,40 €
30 Quote

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: RF Amplifier
Delivery Restrictions:
 This product may require additional documentation to export from the United States.
RoHS:  
32 GHz to 38 GHz
26 V
640 mA
21.6 dB
Power Amplifiers
SMD/SMT
Die
GaN
- 40 C
+ 85 C
TGA2222
Gel Pack
Brand: Qorvo
Development Kit: TGA2222EVB1
Input Return Loss: 17 dB
Number of Channels: 1 Channel
Pd - Power Dissipation: 60 W
Product Type: RF Amplifier
Factory Pack Quantity: 10
Subcategory: Wireless & RF Integrated Circuits
Test Frequency: 38 GHz
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TARIC:
8542330000
CAHTS:
8542330000
USHTS:
8542330001
MXHTS:
8542330299
ECCN:
3A001.b.2.d

TGA2222 Wide Band Power Amplifier MMIC

Qorvo TGA2222 Wide Band Power Amplifier MMIC provides 40dBm (10W) saturated output power and 16dB large-signal gain within a 32GHz to 38GHz frequency range. The power amplifier is fabricated on 0.15µ gallium nitride (GaN) with silicon carbide (SiC) processing (QGaN15). The amplifier employs a balanced architecture to minimize performance-sensitivity-to-load variation. TGA2222 radio frequency ports are DC-coupled to ground for optimum electrostatic discharge (ESD) performance. The amplifier has DC-blocking capacitors on both RF ports, which are matched to 50Ω. TGA2222 can support a wide range of operating conditions, including continuous-wave (CW) operation, making it ideal for commercial and military systems.