CoolMOS™ P7 MOSFETs

Infineon Technologies CoolMOS™ P7 MOSFETs deliver a best-in-class price/performance ratio with excellent ease of use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications, including adapters and chargers, lighting, audio SMPS, AUX, and industrial power. The 600V CoolMOS P7 power MOSFETs target low-power and high-power SMPS applications like solar inverters, servers, telecom, and EV charging stations. Infineon P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 

Results: 128
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
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Infineon Technologies MOSFETs LOW POWER_NEW
Datasheet
3 000In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 1.5 A 4.5 Ohms - 30 V, 30 V 3 V 4 nC - 50 C + 150 C 13 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW
Datasheet
516In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 950 V 9 A 750 mOhms - 20 V, 20 V 2.5 V 23 nC - 55 C + 150 C 73 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
217In Stock
240Expected 16/02/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 26 A 100 mOhms - 20 V, 20 V 3 V 36 nC - 55 C + 150 C 95 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
130In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 76 A 30 mOhms - 20 V, 20 V 3 V 121 nC - 55 C + 150 C 255 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
174In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 37 A 69 mOhms - 20 V, 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW
Datasheet
1 494In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 3 000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 800 V 8 A 510 mOhms - 30 V, 30 V 3 V 20 nC - 55 C + 150 C 7.4 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs LOW POWER_NEW
Datasheet
328In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 17 A 280 mOhms - 30 V, 30 V 3 V 36 nC - 50 C + 150 C 101 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW
Datasheet
538In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 770 mOhms - 20 V, 20 V 2.5 V 15 nC - 55 C + 150 C 45 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs CONSUMER
Datasheet
197In Stock
4 500On Order
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 700 V 8.5 A 490 mOhms - 16 V, 16 V 2.5 V 10.5 nC - 40 C + 150 C 43.1 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs LOW POWER_NEW
Datasheet
231In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 17 A 280 mOhms - 30 V, 30 V 3 V 36 nC - 50 C + 150 C 101 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
42 720On Order
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 18 A 145 mOhms - 20 V, 20 V 3 V 25 nC - 55 C + 150 C 72 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW
Datasheet
14 987On Order
Min.: 1
Mult.: 1
Reel: 5 000

Si SMD/SMT TDFN-8 N-Channel 1 Channel 800 V Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
2 947On Order
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 48 A 49 mOhms - 20 V, 20 V 3 V 67 nC - 55 C + 150 C 164 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
5 500On Order
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37 A 69 mOhms - 20 V, 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
906Expected 23/07/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 48 A 49 mOhms - 20 V, 20 V 3 V 67 nC - 55 C + 150 C 164 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
1 601Expected 14/05/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 37 A 69 mOhms - 20 V, 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW
Datasheet
1 000Expected 02/03/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 12 A 214 mOhms - 20 V, 20 V 3 V 18 nC - 55 C + 150 C 24 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW
Datasheet
915Expected 22/05/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 8 A 510 mOhms - 20 V, 20 V 2.5 V 20 nC - 55 C + 150 C 28 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW
Datasheet
350Expected 11/06/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 4 A 1.4 Ohms - 30 V, 30 V 3 V 10 nC - 50 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
227Expected 03/07/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 48 A 49 mOhms - 20 V, 20 V 3 V 67 nC - 55 C + 150 C 164 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW
Datasheet
Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 3 A 1.7 Ohms - 20 V, 20 V 2.5 V 9 nC - 55 C + 150 C 24 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
Non-Stocked Lead-Time 12 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 61 A 45 mOhms - 20 V, 20 V 3.5 V 90 nC - 55 C + 150 C 201 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs LOW POWER_NEW
Datasheet
Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 13 A 310 mOhms - 20 V, 20 V 2.5 V 30 nC - 55 C + 150 C 84 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW
Datasheet
Non-Stocked Lead-Time 13 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 13 A 310 mOhms - 30 V, 30 V 2.5 V 30 nC - 55 C + 150 C 30 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_NEW
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 5 000
Mult.: 5 000
Reel: 5 000

Si SMD/SMT TDFN-8 N-Channel 1 Channel 700 V Enhancement CoolMOS Reel