CoolSiC™ 750V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETs are designed to offer high efficiency, robustness against parasitic turn-on for unipolar gate driving, and reliability. These MOSFETs offer superior performance in Totem Pole, ANPC, Vienna rectifier, and FCC hard-switching topologies. The reduction in Output Capacitance (Coss) enables the MOSFETs to operate at higher switching frequencies in Cycloconverter, CLLC, DAB, and LLC soft switching topologies. The CoolSiC™ 750V G2 MOSFETs feature up to 78mΩ maximum drain-source on-resistance and switching losses through improved gate control. These MOSFETs are automotive and industrial qualified. Typical applications include EV charging infrastructure, telecom, circuit breakers, solid state relays, solar PV inverters, and HV‑LV DC-DC converters.

Results: 30
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 750 V G2 1In Stock
5 250On Order
Min.: 1
Mult.: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 840 V 222 A 8.5 mOhms - 7 V to + 23 V 5.6 V 171 nC - 55 C + 175 C 789 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SiC MOSFET, 750V, G2, 11 m
50Expected 26/04/2027
Min.: 1
Mult.: 1
: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 129 A 22 mOhms - 7 V, + 23 V 4.5 V 106 nC - 55 C + 175 C 416 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SiC MOSFET, 750V, G2, 16 m
50Expected 26/04/2027
Min.: 1
Mult.: 1
: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 93 A 32 mOhms - 7 V, + 23 V 4.5 V 74 nC - 55 C + 175 C 318 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SiC MOSFET, 750V, G2, 20 m
50Expected 26/04/2027
Min.: 1
Mult.: 1
: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 79 A 40 mOhms - 7 V, + 23 V 4.5 V 59 nC - 55 C + 175 C 282 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 750 V G2
50On Order
Min.: 1
Mult.: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 40 mOhms - 7 V to + 23 V 4.5 V 59 nC - 55 C + 175 C 340 W Enhancement CoolSiC