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NVMTS1D2N08H

Name: onsemi NVMTS1D2N08H
Brand: onsemi
SKU: 863-NVMTS1D2N08H
Price: 6.05 EUR
Availability: InStock

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See Product Specifications

Mouser No:

863-NVMTS1D2N08H

Mfr. No:

NVMTS1D2N08H

Mfr.:

onsemi

Description:

MOSFETs 80V 337A 1.1mOhms

Datasheet:

NVMTS1D2N08H Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVMTS1D2N08H

In Stock: 3 391

Stock:: 3 391 Can Dispatch Immediately

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Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	6,05 €	6,05 €
	4,09 €	40,90 €
	3,04 €	304,00 €
	2,88 €	2 880,00 €
Full Reel (Order in multiples of 3000)
	2,85 €	8 550,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFNW-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	337 A
Rds On - Drain-Source Resistance:	1.1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	147 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	300 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Fall Time:	19 ns
Forward Transconductance - Min:	400 S
Product Type:	MOSFETs
Rise Time:	14 ns
Series:	NVMTS1D2N08H
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	66 ns
Typical Turn-On Delay Time:	29 ns
Unit Weight:	319,280 mg

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Datasheet

NVMTS1D2N08H Datasheet

PCN

ON Semiconductor MPN Label Format Change (PDF)

Material Composition Disclosure

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Trench8 MOSFETs

onsemi Trench8 MOSFETs feature low maximum ON-resistance (R_DS(ON), ultra-low gate charge (Q_g), and low (Q_g) x R_DS(ON), a key figure of merit (FOM) for MOSFETs used in power conversion applications. Featuring optimized switching performance based on T6 technology, the Trench8 MOSFETs offer a 35% to 40% reduction in Q_g and Q_oss from the Trench6 series. The onsemi Trench8 MOSFETs are available in a wide range of package types for design flexibility. AEC-Q101 Qualified and PPAP capable options are available for automotive applications. Many of these devices are offered in flank-wettable packages enabling automated optical inspection (AOI).

N-Channel 80V Automotive Power MOSFET

onsemi N-Channel 80V Automotive Power MOSFET is available in an 8mm x 8mm flat-lead package ideal for compact and efficient designs. The single N-Channel 80V device features a 1.1mΩ R_DS(on) drain-source on-resistance. The MOSFET includes a wettable flank option available for enhanced optical inspection. The onsemi N-Channel 80V Automotive Power MOSFET is also AEC-Q101-qualified and PPAP-capable, making it suitable for automotive applications.