It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

QPD0005MTR13

Name: Qorvo QPD0005MTR13
Brand: Qorvo
SKU: 772-QPD0005MTR13
Price: 9.16 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

772-QPD0005MTR13

Mfr. No:

QPD0005MTR13

Mfr.:

Qorvo

Description:

GaN FETs 2.5-5.0GHz 8W 48V GaN Transistor

Lifecycle:

NRND:

Not recommended for new designs.

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Qorvo QPD0005MTR13

In Stock: 1 646

Stock:: 1 646 Can Dispatch Immediately

An unexpected error occurred. Please try again later.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	9,16 €	9,16 €
	6,39 €	63,90 €
	6,10 €	152,50 €
	5,29 €	529,00 €
	5,05 €	1 262,50 €
	4,68 €	2 340,00 €
Full Reel (Order in multiples of 2500)
	3,97 €	9 925,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Package/Case:	4.5 mm x 4 mm
Vds - Drain-Source Breakdown Voltage:	48 V
Brand:	Qorvo
Gain:	18.6 dB
Maximum Operating Frequency:	5 GHz
Minimum Operating Frequency:	2.5 GHz
Moisture Sensitive:	Yes
Output Power:	8 W
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	GaN FETs
Series:	QPD0005M
Factory Pack Quantity:	2500
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	HEMT
Part # Aliases:	QPD0005M

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

PCN

Product Change Notification (PDF)

CNHTS:: 8541290000
USHTS:: 8541497080
ECCN:: EAR99

QPD0005M RF JFET Transistors

Qorvo QPD0005M RF JFET Transistors are single-path discrete GaNs on SiC HEMT in a plastic overmold DFN package. The transistors operate from 2.5 to 5.0GHz. The devices are single-stage, unmatched transistors capable of delivering a P_SAT of 5.9W at +48V operation.