HMC8500 RF Amplifiers

Analog Devices Inc. HMC8500 RF Amplifiers are gallium nitride (GaN), broadband power amplifiers. The amplifiers deliver >10W with up to 55% power added efficiency (PAE) and ±1.0dB typical gain flatness across a 0.01GHz to 2.8GHz instantaneous bandwidth. The HMC8500 series provides a 41dBm high-saturated output power from a 28V at 100mA supply voltage. In addition, the amplifiers offer a 4.5dB noise figure, 47dBM third-order intercept (OIP3), and 10dB return loss.

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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Operating Frequency
Operating Supply Voltage
Operating Supply Current
Gain
NF - Noise Figure
Type
Mounting Style
Package/Case
Technology
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Analog Devices RF Amplifier High Power GaN Amps- 10W 1 - 2.5GHz PA
Datasheet
Lead-Time 10 Weeks
Min.: 1
Mult.: 1

10 MHz to 2.8 GHz 28 V 100 mA 15 dB 4.5 dB Power Amplifiers SMD/SMT LFCSP-32 GaN 47 dBm - 40 C + 85 C HMC8500 Cut Tape
Analog Devices RF Amplifier High Power GaN Amps- 10W 1 - 2.5GHz PA
Datasheet
Non-Stocked Lead-Time 10 Weeks
Min.: 500
Mult.: 500
Reel: 500

10 MHz to 2.8 GHz 28 V 100 mA 15 dB 4.5 dB Power Amplifiers SMD/SMT LFCSP-32 GaN 47 dBm - 40 C + 85 C HMC8500 Reel