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NTH4L023N065M3S

Name: onsemi NTH4L023N065M3S
Brand: onsemi
SKU: 863-NTH4L023N065M3S
Price: 9.96 EUR
Availability: InStock

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Mouser No:

863-NTH4L023N065M3S

Mfr. No:

NTH4L023N065M3S

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS TO247-4L 23MOHM 650V M3S

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NTH4L023N065M3S Datasheet

ECAD Model:

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More Information

Learn more about onsemi NTH4L023N065M3S

In Stock: 573

Stock:: 573 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	9,96 €	9,96 €
	6,91 €	69,10 €
	6,58 €	658,00 €
	5,53 €	2 488,50 €
	5,48 €	4 932,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	33 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	69 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	245 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	9.6 ns
Packaging:	Tube
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	15 ns
Series:	NTH4L023N065M3S
Factory Pack Quantity:	450
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	35 ns
Typical Turn-On Delay Time:	11 ns

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Datasheet

NTH4L023N065M3S Datasheet

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

NTH4L023N065M3S SiC MOSFET

onsemi NTH4L023N065M3S SiC MOSFET offers a 650V blocking voltage rating, 153pF output capacitance, and a TO-247-4L package with Kelvin source configuration. This MOSFET is designed for fast switching applications, and the featured planar technology works reliably with negative gate voltage drive and turn-off spikes on the gate. The NTH4L023N065M3S MOSFET provides optimum performance when driven with an 18V gate drive and works well with a 15V gate drive. onsemi NTH4L023N065M3S SiC MOSFET is ideal for EV chargers, AI data centers, and solar applications.

Energy Storage Solutions

onsemi Energy Storage Systems (ESS) store electricity from various power sources, like coal, nuclear, wind, and solar, in different forms, including batteries (electrochemical), compressed air (mechanical), and molten salt (thermal). This solution focuses on battery energy storage systems connected to solar inverter systems.