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AG508EGD3HRBTL

Name: ROHM Semiconductor AG508EGD3HRBTL
Brand: ROHM Semiconductor
SKU: 755-AG508EGD3HRBTL
Price: 1.49 EUR
Availability: InStock

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See Product Specifications

Mouser No:

755-AG508EGD3HRBTL

Mfr. No:

AG508EGD3HRBTL

Mfr.:

ROHM Semiconductor

Description:

MOSFETs TO252 P CHAN 40V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

AG508EGD3HRBTL Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor AG508EGD3HRBTL

In Stock: 434

Stock:: 434

Can Dispatch Immediately

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On Order:: 2 500

Expected 17/07/2026
Factory Lead Time:: 16

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,49 €	1,49 €
	0,946 €	9,46 €
	0,634 €	63,40 €
	0,50 €	250,00 €
	0,458 €	458,00 €
Full Reel (Order in multiples of 2500)
	0,423 €	1 057,50 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	24 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 5 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	27.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	53 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	13 ns
Product Type:	MOSFETs
Rise Time:	8 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	63 ns
Typical Turn-On Delay Time:	7 ns

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Datasheet

AG508EGD3HRBTL Datasheet

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

AG508EGD3 -40V -40A P-Channel Power MOSFET

ROHM Semiconductor AG508EGD3 -40V/-40A P-Channel Power MOSFET is an automotive-grade MOSFET that is AEC-Q101 qualified. It has a low on-resistance (0.024Ω at V_GS=4.5V) and is suitable for automotive systems applications. It comes in a TO-252 (DPAK) package and is Pb-free and RoHS-compliant. The ROHM Semiconductor AG508EGD3 is rated at a drain-source voltage (V_DSS) of -40V and has a continuous drain current (I_D) (at V_GS=-10) of ±40A.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.