NTMFS3D0N08XT1G

onsemi
863-NTMFS3D0N08XT1G
NTMFS3D0N08XT1G

Mfr.:

Description:
MOSFETs T10 80V STD NCH MOSFET SO8FL

ECAD Model:
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In Stock: 98

Stock:
98
Can Dispatch Immediately
On Order:
9 000
Expected 23/10/2026
Factory Lead Time:
32
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
2,30 € 2,30 €
1,47 € 14,70 €
0,998 € 99,80 €
0,832 € 416,00 €
0,697 € 697,00 €
Full Reel (Order in multiples of 1500)
0,697 € 1 045,50 €

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
SO-8
N-Channel
1 Channel
80 V
154 A
2.6 mOhms
- 20 V, 20 V
3.6 V
28 nC
- 55 C
+ 175 C
133 W
Enhancement
Reel
Cut Tape
Brand: onsemi
Configuration: Single
Fall Time: 6 ns
Forward Transconductance - Min: 115 S
Product Type: MOSFETs
Rise Time: 8 ns
Series: NTMFS3D0N08X
Factory Pack Quantity: 1500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 35 ns
Typical Turn-On Delay Time: 24 ns
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

PowerTrench Technology

onsemi PowerTrench Technology represents the advancement of PowerTrench technology, especially from T6 to T10, which signifies a breakthrough in power electronics. Developed by onsemi, PowerTrench MOSFETs offer enhanced efficiency and performance across various applications. The shift from T6/T8 to T10 significantly improves on-resistance and switching performance, which is crucial for energy-efficient designs.

NTMFS3D0N08X Single N-Channel Power MOSFET

onsemi NTMFS3D0N08X Single N-Channel Power MOSFET is an 80V T10 standard gate MOSFET ideal for Cloud power, 5G Telecom, and other PSU applications, as well as DC/DC and industrial applications. NTMFS3D0N08X provides better performance with improved system efficiency and high power density with below-performance features. This MOSFET provides improved overall efficiency, improved switching losses, reduced ringing/overshoot/noise, and improved Avalanche ruggedness in fast-switching applications.