VSLB4940

Vishay Semiconductors
78-VSLB4940
VSLB4940

Mfr.:

Description:
Infrared Emitters 940nm, T-1 65mW/sr, +/-22deg.

ECAD Model:
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In Stock: 8 233

Stock:
8 233 Can Dispatch Immediately
Factory Lead Time:
8 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
0,507 € 0,51 €
0,353 € 3,53 €
0,255 € 25,50 €
0,212 € 106,00 €
0,185 € 185,00 €
0,181 € 905,00 €
0,157 € 1 570,00 €
0,151 € 3 775,00 €

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: Infrared Emitters
RoHS:  
Through Hole
940 nm
65 mW/sr
22 deg
100 mA
1.42 V
160 mW
- 25 C
+ 85 C
T-1 (3 mm)
Brand: Vishay Semiconductors
Fall Time: 15 ns
Illumination Colour: Infrared
Product Type: IR Emitters (IR LEDs)
Rise Time: 15 ns
Series: VSL
Factory Pack Quantity: 5000
Subcategory: Infrared Data Communications
Unit Weight: 233,750 mg
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Attributes selected: 0

TARIC:
8541410000
CNHTS:
8541410090
USHTS:
8541410000
MXHTS:
85415001
BRHTS:
85415020
ECCN:
EAR99

VSLB4940 High-Speed Infrared Emitting Diode

Vishay Semiconductors VSLB4940 High-Speed Infrared Emitting Diode is suitable for high pulse current operation. The VSLB4940 diode offers 940nm peak wavelength, 65mW/sr radiant intensity, ±22° beam angle, 1.42V typical forward voltage, and 15ns fall time. This infrared diode is available in GaAlAs, Multi-quantum Well (MQW) technology, and is molded in a clear plastic package. The VSLB4940 infrared diode comes in a leaded type T-1 package and ∅3mm dimensions. This infrared diode is suitable for applications like infrared remote control units, reflective sensors, and light barriers.