GaN Semiconductors

Results: 768
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS
Analog Devices RF Amplifier 1-22GHz 15W PA
Non-Stocked Lead-Time 13 Weeks
Min.: 1
Mult.: 1

Analog Devices RF Amplifier 8-12 GHz,20W,GaN Radar PA
Non-Stocked Lead-Time 39 Weeks
Min.: 1
Mult.: 1

Analog Devices RF Amplifier 8-12 GHz,20W,GaN Radar PA
Non-Stocked Lead-Time 39 Weeks
Min.: 100
Mult.: 100
: 100

Analog Devices RF Amplifier 0.0-1GHz 12W PA Non-Stocked Lead-Time 32 Weeks
Min.: 5
Mult.: 5

Texas Instruments Gate Drivers Automotive 7A and 5A single-channel gate Non-Stocked Lead-Time 18 Weeks
Min.: 3 000
Mult.: 3 000
: 3 000

Texas Instruments Gate Drivers 5A/5A dual-channel g ate driver with 4V Non-Stocked Lead-Time 18 Weeks
Min.: 1
Mult.: 1
: 5 000
EPC GaN FETs 100 V eGaN FET, 3.2 mohm Rdson, 3.725 mm x 1.45 mm, Cu pillar CSP Non-Stocked Lead-Time 18 Weeks
Min.: 5 000
Mult.: 1 000
: 1 000

EPC GaN FETs EPC eGaN Symetrical Half Bridge,60 V, 4.9 milliohm at 5 V, BGA 6.05 x 2.3 Non-Stocked Lead-Time 18 Weeks
Min.: 2 500
Mult.: 500
: 500

EPC GaN FETs EPC eGaN Symetrical Half Bridge,100 V, 6.8 milliohm at 5 V, BGA 6.05 x 2.3 Non-Stocked Lead-Time 18 Weeks
Min.: 2 500
Mult.: 500
: 500

EPC GaN FETs EPC eGaN Dual FET, Common Source, 120 V, 110 milliohm at 5 V, BGA 1.35 x 1.35 Non-Stocked Lead-Time 18 Weeks
Min.: 12 500
Mult.: 2 500
: 2 500

EPC GaN FETs EPC AEC eGaN Dual FET,100 V, 58 milliohm at 5 V, BGA 1.35 x 1.35 Non-Stocked Lead-Time 18 Weeks
Min.: 12 500
Mult.: 2 500
: 2 500

EPC GaN FETs EPC eGaN FET,160 V, 8 milliohm at 5 V, BGA 4.6 x 2.6 Non-Stocked Lead-Time 18 Weeks
Min.: 2 500
Mult.: 500
: 500

EPC GaN FETs EPC eGaN FET,65 V, 480 milliohm at 5 V, LGA 2.05 x 0.85 Non-Stocked Lead-Time 18 Weeks
Min.: 12 500
Mult.: 2 500
: 2 500

Fairview Microwave RF Amplifier 40 dB Gain GaN Power Amplifier at 4 Watt P1dB Operating from 20 MHz to 1 GHz with 44 dBm IP3, 32% PAE, 6 dB NF, SMA, with Heatsink Non-Stocked
Min.: 1
Mult.: 1
Fairview Microwave RF Amplifier 48 dB Gain High Power GaN Amplifier at 50 Watt Psat Operating from 500 MHz to 3 GHz with 52 dBm IP3, SMA Input, SMA Output Non-Stocked
Min.: 1
Mult.: 1
Fairview Microwave RF Amplifier 800 to 2000 MHz SMA GaN Power Amplifier, 45W, L-Band, 28V, 45% Efficiency and Class AB Non-Stocked
Min.: 1
Mult.: 1
Fairview Microwave RF Amplifier 1000 to 2500 MHz SMA GaN Power Amplifier, 18W, L & S Bands, 28V, 50% Efficiency and Class AB Non-Stocked
Min.: 1
Mult.: 1
Fairview Microwave RF Amplifier 1000 to 2500 MHz SMA GaN Power Amplifier with Integrated Heatsink and Cooling Fan, 18W, L & S Band, 28V, 50% Efficiency and Class AB Non-Stocked
Min.: 1
Mult.: 1
Fairview Microwave RF Amplifier 1000 to 2500 MHz SMA GaN Power Amplifier, 7W, L & S Bands, 28V, 35% Efficiency and Class AB Non-Stocked
Min.: 1
Mult.: 1
Fairview Microwave RF Amplifier 200 to 2600 MHz SMA GaN Power Amplifier, 10W, High VHF Through S Bands, 28V, 40% Efficiency and Class AB Non-Stocked
Min.: 1
Mult.: 1
Fairview Microwave RF Amplifier 1000 to 2500 MHz SMA GaN Power Amplifier, 20W, L & S Bands, 28V, 50% Efficiency and Class AB Non-Stocked
Min.: 1
Mult.: 1
Fairview Microwave RF Amplifier 40 dB Gain High Power GaN Amplifier at 10 Watt Psat Operating from 6 GHz to 18 GHz with SMA Non-Stocked
Min.: 1
Mult.: 1
Fairview Microwave RF Amplifier 43 dB Gain High Power GaN Amplifier at 10 Watt Psat Operating from 700 MHz to 6 GHz with SMA Input, SMA Output
Non-Stocked
Min.: 1
Mult.: 1
ROHM Semiconductor Gate Drivers Single-Channel Ultra-Fast Gate Driver For Automotive Non-Stocked
Min.: 4 000
Mult.: 1

ROHM Semiconductor GaN FETs EcoGaN, 650V 59.8A TOLL-8N, E-mode Gallium-Nitride(GaN) HEMT Non-Stocked Lead-Time 24 Weeks
Min.: 2 000
Mult.: 2 000
: 2 000