GP3T020A120H

SemiQ
148-GP3T020A120H
GP3T020A120H

Mfr.:

Description:
SiC MOSFETs Gen3 1200V, 20mohm SiC MOSFET, TO-247-4L

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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More Information
Learn more about SemiQ GP3T020A120H

In Stock: 55

Stock:
55
Can Dispatch Immediately
On Order:
60
Expected 18/02/2026
Factory Lead Time:
18
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
10,00 € 10,00 €
6,07 € 60,70 €
5,18 € 621,60 €
5,08 € 2 590,80 €

Product Attribute Attribute Value Select Attribute
SemiQ
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-4L
N-Channel
1 Channel
1.2 kV
280 A
25 mOhms
- 4.5 V, + 18 V
4 V
234 nC
- 55 C
+ 175 C
429 W
Enhancement
Brand: SemiQ
Configuration: Single
Fall Time: 18 ns
Forward Transconductance - Min: 24 S
Packaging: Tube
Product: MOSFETs
Product Type: SiC MOSFETS
Rise Time: 25 ns
Series: GP3T
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Type: SiC MOSFET
Typical Turn-Off Delay Time: 59 ns
Typical Turn-On Delay Time: 19 ns
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Attributes selected: 0

Datasheet

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

GEN3 1200V SiC MOSFET Discrete Devices

SEMiQ GEN3 1200V SiC MOSFET Discrete Devices are third-generation SiC MOSFETs and are 20% smaller than SEMiQ’s second-generation SiC MOSFETs. These devices have been developed to increase performance and cut switching losses in high-voltage applications.

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