IMZA120R020M1HXKSA1

Infineon Technologies
726-IMZA120R020M1HXK
IMZA120R020M1HXKSA1

Mfr.:

Description:
SiC MOSFETs CoolSiC 1200 V, 20 mohm SiC Trench MOSFET in TO247-4 package

Datasheet:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
1 438
Expected 02/03/2026
960
Expected 01/04/2026
Factory Lead Time:
26
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
17,17 € 17,17 €
14,64 € 146,40 €
12,66 € 1 266,00 €
12,65 € 6 072,00 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
98 A
19 mOhms
- 10 V, + 23 V
4.2 V
83 nC
- 55 C
+ 150 C
375 W
Enhancement
Brand: Infineon Technologies
Packaging: Tube
Product: MOSFETs
Product Type: SiC MOSFETS
Factory Pack Quantity: 240
Subcategory: Transistors
Technology: SiC
Part # Aliases: IMZA120R020M1H SP005448293
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Attributes selected: 0

Datasheet

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TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

CoolSiC™ 1200V SiC Trench MOSFETs

Infineon Technologies CoolSiC™ 1200V SiC Trench MOSFETs combine the strong physical characteristics of Silicon Carbide with unique features that increase the device's performance, robustness, and ease of use. The CoolSiC 1200V SiC Trench MOSFETs are built on a state-of-the-art trench semiconductor process optimized to deliver the lowest application losses and the highest reliability in operation. Suitable for high-temperature and harsh environment operations, these devices enable the simplified and cost-effective deployment of the highest system efficiency.

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