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RQ3N025ATTB1

Name: ROHM Semiconductor RQ3N025ATTB1
Brand: ROHM Semiconductor
SKU: 755-RQ3N025ATTB1
Price: 1.14 EUR
Availability: InStock

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See Product Specifications

Mouser No:

755-RQ3N025ATTB1

Mfr. No:

RQ3N025ATTB1

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Pch -80V -2.5A, HSMT8, Power MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

RQ3N025ATTB1 Datasheet

ECAD Model:

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Learn more about ROHM Semiconductor RQ3N025ATTB1

In Stock: 2 900

Stock:: 2 900 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,14 €	1,14 €
	0,717 €	7,17 €
	0,473 €	47,30 €
	0,368 €	184,00 €
	0,335 €	335,00 €
Full Reel (Order in multiples of 3000)
	0,291 €	873,00 €
	0,269 €	1 614,00 €
	0,267 €	2 403,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	HSMT-8
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	7 A
Rds On - Drain-Source Resistance:	240 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	13 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	14 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	15 ns
Forward Transconductance - Min:	2.4 S
Product Type:	MOSFETs
Rise Time:	6.4 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	8.6 ns

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Datasheet

RQ3N025ATTB1 Datasheet

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

RQxAT P-Channel MOSFETs

ROHM Semiconductor RQxAT P-Channel features surface mount packaging with low ON resistance and are 100% Rg and UIS tested. These P-channel MOSFETs offer a gate-source voltage of ±20V. The RQ3N025AT and RQ5L030AT MOSFETs feature a maximum drain-source ON resistance of 240mΩ and 99mΩ, respectively. These P-channel MOSFETs are RoHS compliant and halogen-free. The RQ3N025AT and RQ5L030AT MOSFETs offer a drain-source voltage of -80V and -60V, respectively. These P-channel MOSFETs operate within the -55°C to 150°C temperature range. Typical applications include switching and motor drives.