MASTERGAN1

STMicroelectronics
511-MASTERGAN1
MASTERGAN1

Mfr.:

Description:
Gate Drivers High power density 600V half-bridge driver with two enhancement mode GaN HEMTs
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Datasheet:
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In Stock: 501

Stock:
501 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 501 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
7,71 € 7,71 €
5,50 € 55,00 €
5,25 € 131,25 €
4,57 € 457,00 €
4,36 € 1 090,00 €
3,98 € 1 990,00 €
3,53 € 3 530,00 €
3,41 € 8 525,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
High-Side, Low-Side
SMD/SMT
QFN-31
2 Driver
1 Output
10 A
4.75 V
9.5 V
- 40 C
+ 125 C
MASTERGAN
Tray
Brand: STMicroelectronics
Development Kit: EVALMASTERGAN1
Moisture Sensitive: Yes
Operating Supply Current: 680 uA
Product Type: Gate Drivers
Rds On - Drain-Source Resistance: 330 mOhms
Shutdown: Shutdown
Factory Pack Quantity: 1560
Subcategory: PMIC - Power Management ICs
Unit Weight: 120 mg
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Attributes selected: 0

CNHTS:
8542399000
USHTS:
8542390090
ECCN:
EAR99

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an RDS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.

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