STMicroelectronics SiC MOSFETs

Results: 5
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package 871In Stock
Min.: 1
Mult.: 1
Reel: 1 000

SMD/SMT H2PAK-7 N-Channel 1 Channel 1.2 kV 112 A 22 mOhms - 10 V, + 22 V 3 V 150 nC - 55 C + 175 C 652 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package 1 082In Stock
Min.: 1
Mult.: 1
Reel: 1 000

SMD/SMT H2PAK-7 N-Channel 1 Channel 650 V 60 A 39.3 mOhms - 10 V, + 22 V 3 V 48.6 nC - 55 C + 175 C 300 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package 9In Stock
2 000Expected 12/10/2026
Min.: 1
Mult.: 1
Reel: 1 000

SMD/SMT H2PAK-7 N-Channel 1 Channel 1.2 kV 55 A 37 mOhms - 10 V, + 22 V 3 V 73 nC - 55 C + 175 C 375 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
100On Order
Min.: 1
Mult.: 1
Reel: 1 000

SMD/SMT H2PAK-7 N-Channel 1 Channel 1.2 kV 55 A 37 mOhms - 10 V, + 22 V 3 V 73 nC - 55 C + 175 C 375 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package Non-Stocked Lead-Time 16 Weeks
Min.: 1 000
Mult.: 1 000
Reel: 1 000

SMD/SMT H2PAK-7 N-Channel 1 Channel 1.2 kV 30 A 87 mOhms - 10 V, + 22 V 3 V 37 nC - 55 C + 175 C 223 W Enhancement