TriQuint GaN Solutions

TriQuint leads the market in developing gallium nitride (GaN) products and processes. TriQuint's GaN technology supports RF requirements up to 40GHz with drain bias up to 48V. GaN-based solutions offer greater power density, efficiency, frequency range and ruggedness. These qualities enable RF systems to use less electricity, operate with less input voltage and deliver greater RF output power while reducing amplifier size and part counts. TriQuint GaN technology enables a wide range of MMIC amplifiers, discrete transistors and switches for commercial and defense applications. TriQuint is redefining what is possible, helping customers reach further while bringing designs to market faster than ever before. TriQuint narrowband amplifiers provide higher power with smaller form factors compared to previous generations. TriQuint wideband amplifiers and discrete transistors deliver record-setting power and efficiency levels. TriQuint switches support next-generation radar, electronic warfare (EW) and instrumentation systems with greater efficiency in smaller packages or as die-level components.
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Results: 10
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation
Qorvo GaN FETs DC-12GHz 10W 32V GaN 469In Stock
Min.: 1
Mult.: 1
Reel: 100

SMD/SMT QFN-16 N-Channel 32 V 610 mA - 40 C + 85 C 13.8 W
Qorvo GaN FETs DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN Non-Stocked
Min.: 25
Mult.: 25

SMD/SMT NI-780 N-Channel 36 V 24 A + 275 C 288 W
Qorvo GaN FETs DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN Non-Stocked
Min.: 25
Mult.: 25

SMD/SMT NI-780 N-Channel 36 V 24 A + 250 C 288 W
Qorvo GaN FETs DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB Non-Stocked Lead-Time 20 Weeks
Min.: 100
Mult.: 100

Die N-Channel
Qorvo GaN FETs DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB Lead-Time 16 Weeks
Min.: 50
Mult.: 50

Die N-Channel
Qorvo GaN FETs DC-3.5GHz 36Volt GaN 120 Watt Peak
Non-Stocked
Min.: 25
Mult.: 25

SMD/SMT NI-360 N-Channel 36 V 12 A 117 W
Qorvo GaN FETs DC-3.5GHz 36Volt GaN 120 Watt Peak
Non-Stocked
Min.: 25
Mult.: 25

SMD/SMT N-Channel 36 V 12 A 117 W
Qorvo GaN FETs DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB
Non-Stocked Lead-Time 20 Weeks
Min.: 50
Mult.: 50

Die N-Channel
Qorvo GaN FETs DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB
Lead-Time 20 Weeks
Min.: 50
Mult.: 50

Die N-Channel
Qorvo GaN FETs DC-18GHZ 90W TQGaN25 PAE 70.5% Gain 19dB
Non-Stocked Lead-Time 20 Weeks
Min.: 50
Mult.: 50

Die N-Channel