Hall Effect ICs

ROHM Semiconductor Hall Effect ICs include unipolar detection, omnipolar detection, bipolar detection, and omnipolar with polarity detection ICs. These ICs feature a low average current of 3.5µA and fully-integrated CMOS logic output circuitry. The integrated dynamic offset cancellation provides high sensitivity, allowing for less precise placement of the permanent magnet. The product is rated at 8kV ESD withstand and rated for -40°C to +85°C operation. The Hall ICs are ideal for a wide range of portable consumer electronics applications including mobile phones, digital cameras, and computers.

Results: 3
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Packaging
ROHM Semiconductor MOSFETs HSMT8 N-CH 60V 20A 4 549In Stock
Min.: 1
Mult.: 1
Reel: 3 000

Si SMD/SMT HSMT-8G N-Channel 1 Channel 60 V 20 A 24.7 mOhms - 20 V, 20 V 2.5 V 7.6 nC - 55 C + 150 C 15 W Enhancement Reel, Cut Tape
ROHM Semiconductor MOSFETs DFN 100V 2A DUAL CH 17 338In Stock
Min.: 1
Mult.: 1
Reel: 3 000

Si SMD/SMT DFN-2020-8D N-Channel, P-Channel 2 Channel 100 V 2 A, 1 A 207 mOhms, 840 mOhms - 20 V, 20 V 2.5 V 2.8 nC, 6.7 nC - 55 C + 150 C 2 W Enhancement Reel, Cut Tape, MouseReel
ROHM Semiconductor MOSFETs -100V 1.0A, Dual Pch+Pch, DFN2020-8D, Power MOSFET
5 892On Order
Min.: 1
Mult.: 1
Reel: 3 000

Si SMD/SMT DFN-2020-8D P-Channel 2 Channel 100 V 1 A 840 mOhms - 20 V, 20 V 2.5 V 6.7 nC - 55 C + 150 C 2 W Enhancement Reel, Cut Tape