NXH240B120H3Q1x1G Si/SiC Hybrid Modules

onsemi NXH240B120H3Q1x1G Si/SiC Hybrid Power Integrated Modules (PIMs) contain a three-channel 1200V IGBT + SiC Boost module and an NTC thermistor. Each channel consists of a fast-switching 80A IGBT, a 30A SiC diode, a bypass diode, and an IGBT protection diode. Integrated field stop trench IGBTs and SiC diodes provide lower conduction losses and switching losses, enabling high efficiency and superior reliability.

Results: 2
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onsemi NXH100B120H3Q0SG
onsemi Discrete Semiconductor Modules PIM 60-80KW Q0BOOST-L57 1200V 100A (SOLDER PIN) 24In Stock
Min.: 1
Mult.: 1
IGBT-SiC Diode Modules Si NXH100B120H3Q0 Tray
onsemi NXH100B120H3Q0PG
onsemi Discrete Semiconductor Modules PIM 60-80KW Q0BOOST-L57 1200V 100A (PRESS-FIT PIN) 312Factory Stock Available
Min.: 24
Mult.: 24
IGBT-SiC Diode Modules Si NXH100B120H3Q0 Tray