Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

Results: 2
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 Mfr.
Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Product
Type
Technology
Vf - Forward Voltage
Vr - Reverse Voltage
Vgs - Gate-Source Voltage
Mounting Style
Package/Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
ROHM Semiconductor Discrete Semiconductor Modules Half Bridge Module SiC DMOS & SBD 1200V
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

SiC MOSFET-SiC SBD Modules Half Bridge SiC 1.2 kV - 6 V, + 22 V Screw Mount Module - 40 C + 150 C BSMx Tray
ROHM Semiconductor Discrete Semiconductor Modules SIC Pwr Module Chopper
Datasheet
Lead-Time 27 Weeks
Min.: 1
Mult.: 1

MOSFET-SiC SBD Modules Silicon Carbide (SiC) Module SiC 1.6 V 1.2 kV - 4 V, + 22 V Screw Mount Module - 40 C + 150 C Bulk