SiC Power Modules

ROHM Semiconductor SiC power modules are half-bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These ROHM modules support high-frequency operation through reduced switching loss. The optimized design reduces stray inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.

Results: 2
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Product Type Technology Vf - Forward Voltage Vr - Reverse Voltage Vgs - Gate-Source Voltage Mounting Style Package/Case Minimum Operating Temperature Maximum Operating Temperature Series Packaging
ROHM Semiconductor Discrete Semiconductor Modules Half Bridge Module SiC DMOS & SBD 1200V Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

SiC MOSFET-SiC SBD Modules Half Bridge SiC 1.2 kV - 6 V, + 22 V Screw Mount Module - 40 C + 150 C BSMx Tray
ROHM Semiconductor Discrete Semiconductor Modules SIC Pwr Module Chopper Lead-Time 27 Weeks
Min.: 1
Mult.: 1

MOSFET-SiC SBD Modules Silicon Carbide (SiC) Module SiC 1.6 V 1.2 kV - 4 V, + 22 V Screw Mount Module - 40 C + 150 C Bulk