NXH100B120H3Q0 Dual Boost Power Modules

onsemi NXH100B120H3Q0 Dual Boost Power Modules feature high efficiency and superior reliability. The NXH100B120H3Q0 integrated field stop trench IGBTs and SiC Diodes provide lower conduction and switching losses. onsemi NXH100B120H3Q0 Dual Boost Power Modules are ideal for energy storage systems, solar inverters, and uninterruptible power supply (UPS) applications.

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Qty. RoHS ECAD Model Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Pd - Power Dissipation
Package/Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
onsemi IGBT Modules PIM 60-80KW Q0BOOST-L57 1200V 100A (PRESS-FIT PIN TIM)
Datasheet
28In Stock
Min.: 1
Mult.: 1

SiC IGBT Modules Dual 1.2 kV 1.77 V 50 A 800 nA 186 W Q0BOOST - 40 C + 150 C Tray
onsemi IGBT Modules PIM 60-80KW Q0BOOST-L57 1200V 100A (SOLDER PIN TIM)
Datasheet
96Factory Stock Available
More Info Available
Min.: 24
Mult.: 24

SiC IGBT Modules Dual 1.2 kV 1.77 V 50 A 800 nA 186 W Q0BOOST - 40 C + 150 C Tray