1200V CoolSiC™ Modules

Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.

Results: 2
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Product
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Infineon Technologies IGBT Modules EconoPACK 3 module with TRENCHSTOP IGBT7 and CoolSiC Schottky diode and NTC
Datasheet
28In Stock
Min.: 1
Mult.: 1

IGBT Module 1.2 kV 1.69 V 255 A 100 nA 20 mW - 40 C + 175 C Tray
Infineon Technologies IGBT Modules HYBRID PACK DRIVE G1 SIC
Datasheet
Non-Stocked Lead-Time 44 Weeks
Min.: 12
Mult.: 12

Si/SiC Hybrid Modules Tray