STMicroelectronics IGBTs

Results: 205
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Package/Case Mounting Style Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Maximum Gate Emitter Voltage Continuous Collector Current at 25 C Pd - Power Dissipation Minimum Operating Temperature Maximum Operating Temperature Series Qualification Packaging
STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
597Expected 08/06/2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 326 W - 55 C + 175 C M Tube


STMicroelectronics IGBTs Trench gate field-stop 650 V, 40 A high speed HB series IGBT 290In Stock
Min.: 1
Mult.: 1

Si TO-3PF Through Hole Single 650 V 2 V - 20 V, 20 V 80 A 62.5 W - 55 C + 175 C STGFW40H65FB
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 pa 42In Stock
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 650 V 1.55 V - 20 V, 20 V 145 A 441 W - 55 C + 150 C HB2 Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 20 A, high speed HB2 series IGBT in a TO-247 long 493In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 40 A 147 W - 55 C + 175 C HB2 Tube
STMicroelectronics IGBTs 650V 60A HSpd trench gate field-stop IGB 209In Stock
Min.: 1
Mult.: 1

Si TO-3P Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 375 W - 40 C + 175 C STGWT60H65FB Tube
STMicroelectronics IGBTs N-Ch 1200 Volt 3 Amp
1 316On Order
Min.: 1
Mult.: 1

Si TO-220-3 FP Through Hole Single 1.2 kV 2.8 V - 20 V, 20 V 6 A 25 W - 55 C + 150 C STGF3NC120HD Tube
STMicroelectronics IGBTs N-chnl 600V-20A Med Freq
1 000Expected 13/04/2026
Min.: 1
Mult.: 1

Si TO-220-3 Through Hole Single 600 V 1.55 V - 20 V, 20 V 40 A 130 W - 55 C + 150 C STGP19NC60SD Tube
STMicroelectronics IGBTs Trench Gate IGBT M Series 650V 4A
1 913Expected 05/10/2026
Min.: 1
Mult.: 1

Si TO-220-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 8 A 68 W - 55 C + 175 C STGP4M65DF2 Tube

STMicroelectronics IGBTs Trench gate field-stop 600 V, 30 A high speed HB series IGBT Lead-Time 14 Weeks
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 600 V 1.55 V - 20 V, 20 V 60 A 260 W - 55 C + 175 C STGW30H60DFB Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
591Expected 01/04/2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 2 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGWA60H65DFB Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 75 A low loss
396Expected 03/04/2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 120 A 488 W - 55 C + 175 C STGWA75M65DF2 Tube

STMicroelectronics IGBTs Trench gate field-stop 650 V, 10 A low-loss M series IGBT in a D2PAK package Non-Stocked Lead-Time 15 Weeks
Min.: 1
Mult.: 1
Reel: 1 000

Si STGB10M65DF2 Reel, Cut Tape, MouseReel

STMicroelectronics IGBTs Automotive-grade 450 V internally clamped IGBT ESCIS 300 mJ Non-Stocked Lead-Time 14 Weeks
Min.: 1
Mult.: 1
Reel: 1 000

Si D2PAK-3 SMD/SMT 475 V 1.25 V - 12 V, 16 V 25 A 150 W - 55 C + 175 C STGB20N45LZAG AEC-Q101 Reel, Cut Tape, MouseReel

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss Non-Stocked Lead-Time 15 Weeks
Min.: 2 000
Mult.: 1 000
Reel: 1 000

Si D2PAK-3 SMD/SMT Single 650 V 1.6 V - 20 V, 20 V 8 A 68 W - 55 C + 175 C STGB4M65DF2 Reel

STMicroelectronics IGBTs Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Non-Stocked Lead-Time 14 Weeks
Min.: 2 500
Mult.: 2 500
Reel: 2 500

Si DPAK-3 (TO-252-3) SMD/SMT Single 390 V 1.35 V - 12 V, 16 V 125 W - 55 C + 175 C STGD19N40LZ AEC-Q101 Reel
STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 6 A low loss Non-Stocked Lead-Time 15 Weeks
Min.: 1
Mult.: 1

Si TO-220-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 12 A 88 W - 55 C + 175 C STGP6M65DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 600 V, 7 A high speed Non-Stocked Lead-Time 15 Weeks
Min.: 2 000
Mult.: 1 000

Si TO-220-3 Through Hole Single 600 V 1.95 V - 20 V, 20 V 14 A 88 W - 55 C + 175 C STGP7H60DF Tube
STMicroelectronics IGBTs 600V 20A Hi Spd TrenchGate FieldStop Non-Stocked Lead-Time 14 Weeks
Min.: 1 200
Mult.: 600

Si TO-247-3 Through Hole Single 600 V 2 V - 20 V, 20 V 40 A 167 W - 55 C + 175 C STGW20H60DF Tube
STMicroelectronics IGBTs 1250V 20A trench gate field-stop IGBT Non-Stocked Lead-Time 14 Weeks
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.25 kV 2.55 V - 20 V, 20 V 40 A 259 W - 55 C + 175 C STGW20IH125DF Tube
STMicroelectronics IGBTs 650V 40A Trench Gate Field-Stop IGBT
600Expected 22/05/2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGW40H65FB Tube
STMicroelectronics IGBTs 650V 60A Trench Gate Field-Stop IGBT Non-Stocked Lead-Time 14 Weeks
Min.: 600
Mult.: 600

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 375 W - 40 C + 175 C STGW60H65FB Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Non-Stocked Lead-Time 14 Weeks
Min.: 1
Mult.: 1

Si Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGWA25H120DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Non-Stocked Lead-Time 14 Weeks
Min.: 600
Mult.: 600

Si Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGWA25H120F2 Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long Non-Stocked Lead-Time 14 Weeks
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 72 A 230 W - 55 C + 175 C Tube

STMicroelectronics IGBTs Trench gate field-stop 650 V, 40 A high speed HB series IGBT Non-Stocked Lead-Time 14 Weeks
Min.: 600
Mult.: 600

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGWA40H65FB Tube