+ 150 C RF Amplifier

Results: 40
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Operating Frequency Operating Supply Voltage Operating Supply Current Gain NF - Noise Figure Type Mounting Style Package/Case Technology P1dB - Compression Point OIP3 - Third Order Intercept Minimum Operating Temperature Maximum Operating Temperature Qualification Series Packaging
NXP Semiconductors RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 978-1090 MHz, 250 W Peak, 50 V Non-Stocked Lead-Time 26 Weeks
Min.: 50
Mult.: 50
Reel: 50

978 MHz to 1.09 GHz 50 V 32.1 dB Power Amplifiers SMD/SMT TO-270WB-14 Si - 40 C + 150 C AFIC10275 Reel
NXP Semiconductors RF Amplifier Airfast RF Power Integrated Power Amplifier, 25 W Pulse over 2400-3100 MHz, 32 V Non-Stocked Lead-Time 16 Weeks
Min.: 500
Mult.: 500
Reel: 500

2.4 GHz to 3.1 GHz 32 V 31.9 dB Power Amplifiers SMD/SMT TO-270WBG-17 Si - 40 C + 150 C AFIC31025 Reel
Qorvo RF Amplifier 2-18GHz PAE>20% SSG 22dB GaN
Non-Stocked Lead-Time 20 Weeks
Min.: 10
Mult.: 10

2 GHz to 18 GHz 22 V 450 mA 22 dB Power Amplifiers SMD/SMT Die GaN - 55 C + 150 C TGA2214 Waffle
Qorvo RF Amplifier 2.5-4GHz NF 2.5dB Gain 12.5dB RL 20dB Non-Stocked
Min.: 50
Mult.: 50

4 GHz 6 V 320 mA 12.5 dB 2.5 dB Low Noise Amplifiers SMD/SMT Die GaAs 29 dBm 29 dBm - 55 C + 150 C TGA2613 Waffle
Qorvo RF Amplifier GaN 3.1-3.6GHz 80W Gain 25dB PAE 56%
Non-Stocked
Min.: 10
Mult.: 10

3.6 GHz 30 V 125 mA 22 dB Power Amplifiers SMD/SMT Die GaN SiC - 55 C + 150 C TGA2814 Waffle
Qorvo RF Amplifier 21-24GHz NF 6dB 32dBm Ga. 22dB Non-Stocked Lead-Time 22 Weeks
Min.: 500
Mult.: 500
Reel: 500

21.2 GHz to 23.6 GHz 6 V 880 mA 6 dB Power Amplifiers SMD/SMT QFN-EP-20 Si - 40 C + 150 C TGA4533 Reel
Qorvo RF Amplifier TGA4533-SM T/R, 21-24 GHz 1W PA Non-Stocked Lead-Time 20 Weeks
Min.: 500
Mult.: 500
Reel: 500

21.2 GHz to 23.6 GHz 6 V 880 mA 22 dB 6 dB Power Amplifiers SMD/SMT QFN-20 Si 31 dBm 41 dBm - 40 C + 150 C TGA4533 Reel
NXP Semiconductors RF Amplifier 978-1090 MHz, 250 W Peak, 50 V Non-Stocked Lead-Time 16 Weeks
Min.: 500
Mult.: 500
Reel: 500

978 MHz to 1.09 GHz 50 V 32.1 dB Power Amplifiers SMD/SMT TO-270WBG-14 Si - 40 C + 150 C AFIC10275 Reel
MACOM RF Amplifier DIE, MMIC, PA, 30W, 2.5-6.0GHz, GaN HEMT
Non-Stocked Lead-Time 26 Weeks
Min.: 10
Mult.: 10

2.5 GHz to 6 GHz 28 V 20 mA 24 dB Power Amplifiers SMD/SMT Die GaN SiC 26 dBm - 55 C + 150 C Gel Pack
MACOM RF Amplifier DIE, MMIC, DA, 75W, 2.7-3.5GHz, GaN HEMT
Non-Stocked Lead-Time 26 Weeks
Min.: 25
Mult.: 25

2.7 GHz to 3.5 GHz 28 V 28 mA 28 dB Power Amplifiers SMD/SMT Die GaN SiC 28 dBm - 65 C + 150 C Gel Pack
MACOM RF Amplifier GaN MMIC Power Amp 6.0-12.0GHz, 25 Watt
Lead-Time 26 Weeks
Min.: 1
Mult.: 1

6 GHz to 12 GHz 28 V 2 A 34 dB Power Amplifiers Screw GaN 46.2 dBm 22 dBm - 40 C + 150 C Tray
NXP Semiconductors A3G26D055N-2400
NXP Semiconductors RF Amplifier A3G26D055N 2400-2500 MHz Reference Circuit Non-Stocked Lead-Time 1 Week
Min.: 1
Mult.: 1
2.515 GHz to 2.675 GHz 13.9 dB SMD/SMT DFN-6 GaN - 55 C + 150 C A3G26D055N-2400
NXP Semiconductors MMRF2010GNR1
NXP Semiconductors RF Amplifier Airfast RF LDMOS Integrated Power Amplifier, 1030-1090 MHz, 250 W Peak, 50 V Non-Stocked Lead-Time 10 Weeks
Min.: 500
Mult.: 500
Reel: 500

1.03 GHz to 1.09 GHz 50 V 32.6 dB Power Amplifiers SMD/SMT TO-270WBG-14 Si - 55 C + 150 C MMRF2010 Reel
NXP Semiconductors MMRF2010NR1
NXP Semiconductors RF Amplifier Airfast RF LDMOS Integrated Power Amplifier, 1030-1090 MHz, 250 W Peak, 50 V Non-Stocked Lead-Time 10 Weeks
Min.: 500
Mult.: 500
Reel: 500

1.03 GHz to 1.09 GHz 50 V 32.6 dB Power Amplifiers SMD/SMT TO-270WB-14 Si - 55 C + 150 C MMRF2010 Reel
Microchip Technology UA5M15MP
Microchip Technology RF Amplifier 5-18GHz SMT Amplifier w/Int Bias Non-Stocked Lead-Time 20 Weeks
Min.: 25
Mult.: 1

5 GHz to 18 GHz 3.3 V, 5 V 130 mA 12.5 dB 9 dB General Purpose Amplifiers SMD/SMT GaAs InGaP 17 dBm - 65 C + 150 C