S80KS5122GABHI020

Infineon Technologies
727-S5122GABHI020
S80KS5122GABHI020

Mfr.:

Description:
DRAM SPCM

Datasheet:
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Learn more about Infineon Technologies S80KS5122GABHI020

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: DRAM
RoHS:  
HyperRAM
512 Mbit
8 bit
200 MHz
FBGA-24
64 M x 8
35 ns
1.7 V
2 V
- 40 C
+ 85 C
Tray
Brand: Infineon Technologies
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 338
Subcategory: Memory & Data Storage
Supply Current - Max: 44 mA
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Attributes selected: 0

Datasheet

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Compliance Codes
CNHTS:
8542329010
USHTS:
8542320032
ECCN:
3A991.b.2
Origin Classifications
Country of Origin:
Thailand
Assembly Country of Origin:
Thailand
Country of Diffusion:
Taiwan
The country is subject to change at the time of shipment.

S80KS5122 & S80KS5123 HYPERRAM™ 2.0 Memory

Infineon Technologies S80KS5122 and S80KS5123 HYPERRAM™ 2.0 Memory is a high-speed, low-pin-count, low-power self-refresh Dynamic RAM (DRAM) for high-performance embedded systems requiring expansion memory for scratchpad or buffering purposes. HYPERRAM products support JEDEC JESD251 profile compliant HYPERBUS™ and Octal xSPI interfaces that draw upon the legacy features of both parallel and serial interface memories while enhancing system performance and ease of design as reducing system cost. The low-pin count architecture makes HYPERRAM especially suitable for power and board space-constrained applications requiring off-chip external RAM.

In Stock: 6

Stock:
6
Can Dispatch Immediately
On Order:
676
Factory Lead Time:
26
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
10,16 € 10,16 €
8,79 € 87,90 €
8,54 € 213,50 €
8,15 € 407,50 €
7,99 € 2 700,62 €

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