Advanced Linear Devices MOSFETs

Results: 109
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
Advanced Linear Devices MOSFETs Dual N-Ch Matched Pr VGS=0.0V 28In Stock
Min.: 1
Mult.: 1

Si SMD/SMT SOIC-8 N-Channel 2 Channel 10 V 79 mA 14 Ohms - 12 V, 12 V 1.4 V 0 C + 70 C 500 mW Enhancement EPAD Tube

Advanced Linear Devices MOSFETs Quad SAB MOSFET ARRAY VT=2.00V 5In Stock
Min.: 1
Mult.: 1

Si SMD/SMT SOIC-16 N-Channel 4 Channel 10.6 V 80 mA 300 Ohms - 12 V, 12 V 2.02 V 0 C + 70 C 500 mW Enhancement Tube

Advanced Linear Devices MOSFETs Quad SAB MOSFET ARRAY VT=2.10V 4In Stock
Min.: 1
Mult.: 1

Si SMD/SMT SOIC-16 N-Channel 4 Channel 10.6 V 80 mA 400 Ohms - 12 V, 12 V 2.12 V 0 C + 70 C 500 mW Enhancement Tube
Advanced Linear Devices MOSFETs Dual SAB MOSFET ARRAY VT=1.70V 47In Stock
Min.: 1
Mult.: 1

Si SMD/SMT SOIC-8 N-Channel 2 Channel 10.6 V 80 mA 300 Ohms - 12 V, 12 V 1.72 V 0 C + 70 C 500 mW Enhancement Tube
Advanced Linear Devices MOSFETs Dual SAB MOSFET ARRAY VT=1.70V 176In Stock
Min.: 1
Mult.: 1

Si SMD/SMT SOIC-8 N-Channel 2 Channel 10.6 V 80 mA 300 Ohms - 12 V, 12 V 1.72 V - 40 C + 85 C 500 mW Enhancement Tube

Advanced Linear Devices MOSFETs Quad MOSFET ARRAY Vt=2.30V
450Expected 10/09/2026
Min.: 1
Mult.: 1

Si SMD/SMT SOIC-16 N-Channel 4 Channel 10.6 V 80 mA 400 Ohms - 12 V, 12 V 2.32 V 0 C + 70 C 500 mW Enhancement SAB Tube
Advanced Linear Devices MOSFETs Dual SAB MOSFET ARRAY VT=2.70V Lead-Time 17 Weeks
Min.: 1
Mult.: 1

Si SMD/SMT SOIC-8 N-Channel 2 Channel 10.6 V 80 mA 400 Ohms - 12 V, 12 V 2.72 V - 40 C + 85 C 500 mW Enhancement Tube

Advanced Linear Devices MOSFETs Dual EPAD(R) N-Ch
45Expected 25/09/2026
Min.: 1
Mult.: 1

Si Through Hole PDIP-8 N-Channel 2 Channel 10 V 12 mA 500 Ohms, 500 Ohms - 12 V, 12 V 0 V 0 C + 70 C 500 mW Depletion Tube

Advanced Linear Devices MOSFETs Quad SAB MOSFET ARRAY VT=1.70V
100Expected 13/08/2026
Min.: 1
Mult.: 1

Si SMD/SMT SOIC-16 N-Channel 4 Channel 10.6 V 80 mA 300 Ohms - 12 V, 12 V 1.72 V - 40 C + 85 C 500 mW Enhancement Tube
Advanced Linear Devices MOSFETs Dual SAB MOSFET ARRAY VT=2.50V
385Expected 19/08/2026
Min.: 1
Mult.: 1

Si SMD/SMT SOIC-8 N-Channel 2 Channel 10.6 V 80 mA 400 Ohms - 12 V, 12 V 2.52 V - 40 C + 85 C 500 mW Enhancement Tube

Advanced Linear Devices MOSFETs Dual N-Ch Matched Pr VGS=0.0V
50Expected 19/08/2026
Min.: 1
Mult.: 1

Si Through Hole PDIP-8 N-Channel 2 Channel 10 V 79 mA 14 Ohms - 12 V, 12 V 180 mV 0 C + 70 C 500 mW Enhancement EPAD Tube
Advanced Linear Devices MOSFETs Dual N-Ch Matched Pr VGS=0.0V Non-Stocked Lead-Time 6 Weeks
Min.: 1
Mult.: 1

Si SMD/SMT SOIC-8 N-Channel 2 Channel 10 V 79 mA 14 Ohms - 12 V, 12 V 180 mV 0 C + 70 C 500 mW Enhancement EPAD Tube

Advanced Linear Devices MOSFETs Quad MOSFET ARRAY Vt=2.40V Non-Stocked Lead-Time 6 Weeks
Min.: 1
Mult.: 1

Si SMD/SMT SOIC-16 N-Channel 4 Channel 10.6 V 80 mA 400 Ohms - 12 V, 12 V 2.42 V 0 C + 70 C 500 mW Enhancement SAB Tube

Advanced Linear Devices MOSFETs Quad MOSFET ARRAY Vt=2.60V Non-Stocked Lead-Time 3 Weeks
Min.: 1
Mult.: 1

Si SMD/SMT SOIC-16 N-Channel 4 Channel 10.6 V 80 mA 400 Ohms - 12 V, 12 V 2.62 V 0 C + 70 C 500 mW Enhancement SAB Tube

Advanced Linear Devices MOSFETs Quad SAB MOSFET ARRAY VT=2.70V Non-Stocked Lead-Time 10 Weeks
Min.: 50
Mult.: 50

Si SMD/SMT SOIC-16 N-Channel 4 Channel 10.6 V 80 mA - 12 V, 12 V 2.72 V - 40 C + 85 C 500 mW Enhancement Tube
Advanced Linear Devices MOSFETs Dual SAB MOSFET ARRAY VT=2.20V Non-Stocked Lead-Time 4 Weeks
Min.: 50
Mult.: 50

Si SMD/SMT SOIC-8 N-Channel 2 Channel 10.6 V 80 mA 300 Ohms - 12 V, 12 V 2.22 V 0 C + 70 C 500 mW Enhancement Tube
Advanced Linear Devices MOSFETs Dual MOSFET ARRAY Vt=2.80V Non-Stocked Lead-Time 4 Weeks
Min.: 50
Mult.: 50

Si SMD/SMT SOIC-8 N-Channel 2 Channel 10.6 V 80 mA 400 Ohms - 12 V, 12 V 2.82 V 0 C + 70 C 500 mW Enhancement SAB Tube

Advanced Linear Devices MOSFETs PREC N-CHAN EPAD CMOS MOSFET ARRAY Non-Stocked
Min.: 50
Mult.: 50

Si Through Hole PDIP-16 N-Channel 4 Channel 10.6 V 80 mA 25 Ohms - 12 V, 12 V 20 mV 0 C + 70 C 500 mW Enhancement Tube

Advanced Linear Devices MOSFETs PREC N-CHAN EPAD CMOS MOSFET ARRAY Non-Stocked
Min.: 50
Mult.: 50

Si Through Hole PDIP-16 N-Channel 4 Channel 10.6 V 80 mA 25 Ohms - 12 V, 12 V 20 mV 0 C + 70 C 500 mW Enhancement Tube

Advanced Linear Devices MOSFETs PREC N-CHAN EPAD CMOS MOSFET ARRAY Non-Stocked
Min.: 50
Mult.: 50

Si SMD/SMT SOIC-16 N-Channel 4 Channel 10 V 70 mA 25 Ohms - 12 V, 12 V 20 mV 0 C + 70 C 500 mW Depletion Tube

Advanced Linear Devices MOSFETs Quad N-Ch Matched Pr VGS=0.0V Non-Stocked
Min.: 50
Mult.: 50

Si Through Hole PDIP-16 N-Channel 4 Channel 10.6 V 80 mA 25 Ohms - 12 V, 12 V 220 mV 0 C + 70 C 500 mW Enhancement EPAD Tube

Advanced Linear Devices MOSFETs Quad N-Ch Matched Pr VGS=0.0V Non-Stocked
Min.: 50
Mult.: 50

Si SMD/SMT SOIC-16 N-Channel 4 Channel 10.6 V 80 mA 25 Ohms - 12 V, 12 V 220 mV 0 C + 70 C 500 mW Enhancement EPAD Tube

Advanced Linear Devices MOSFETs Quad N-Ch Matched Pr VGS=0.0V Non-Stocked
Min.: 50
Mult.: 50

Si Through Hole PDIP-16 N-Channel 4 Channel 10.6 V 80 mA 25 Ohms - 12 V, 12 V 420 mV 0 C + 70 C 500 mW Enhancement EPAD Tube

Advanced Linear Devices MOSFETs Quad N-Ch Matched Pr VGS=0.0V Non-Stocked
Min.: 50
Mult.: 50

Si SMD/SMT SOIC-16 N-Channel 4 Channel 10.6 V 80 mA 25 Ohms - 12 V, 12 V 420 mV 0 C + 70 C 500 mW Enhancement EPAD Tube

Advanced Linear Devices MOSFETs Quad N-Ch Matched Pr VGS=0.0V Non-Stocked
Min.: 50
Mult.: 50

Si Through Hole PDIP-16 N-Channel 4 Channel 10.6 V 80 mA 25 Ohms - 12 V, 12 V 820 mV 0 C + 70 C 500 mW Enhancement EPAD Tube