EPC GaN FETs

Results: 56
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Channel Mode Tradename Technology
EPC GaN FETs eGaN FET, 50 V, 8.5 milliohm at 5 V, LGA 1.2 x 1.5 mm
12 099Expected 09/10/2026
Min.: 1
Mult.: 1
: 2 500

SMD/SMT LGA-4 N-Channel 1 Channel 50 V 9.6 A 8.5 mOhms - 4 V, 6 V 2.5 V 3 nC - 40 C + 150 C Enhancement eGaN FET GaN
EPC GaN FETs EPC eGaN Dual FET,100 V, 70 milliohm at 5 V, BGA 1.35 x 1.35
4 544Expected 01/01/2027
Min.: 1
Mult.: 1
: 2 500

SMD/SMT BGA-9 N-Channel 2 Channel 100 V 1.7 A 70 mOhms - 4 V, 6 V 2.5 V 730 pC, 730 pC - 40 C + 150 C Enhancement eGaN FET GaN
EPC GaN FETs EPC eGaN Dual FET, Common Source, 120 V, 110 milliohm at 5 V, BGA 1.35 x 1.35
2 500Expected 23/10/2026
Min.: 1
Mult.: 1
: 2 500

SMD/SMT BGA N - Channel 2 Channel 120 V 3.4 A 110 mOhms - 4 V, 6 V 2.5 V 0.8 nC - 40 C + 150 C Enhancement eGaN FET GaN
EPC GaN FETs EPC AEC eGaN Dual FET,100 V, 58 milliohm at 5 V, BGA 1.35 x 1.35
2 500Expected 20/11/2026
Min.: 1
Mult.: 1
: 2 500

SMD/SMT BGA N - Channel 1 Channel 100 V 5 A 58 mOhms - 4 V, 6 V 2.5 V 0.85 nC - 55 C + 150 C Enhancement eGaN FET GaN
EPC GaN FETs 100 V eGaN FET, 3.2 mohm Rdson, 3.725 mm x 1.45 mm, Cu pillar CSP Non-Stocked Lead-Time 18 Weeks
Min.: 1 000
Mult.: 1 000
: 1 000

SMD/SMT N - Channel 1 Channel 100 V 69 A 3.2 mOhms - 4 V, 6 V 2.5 V 12 nC - 40 C + 150 C Enhancement eGaN FET GaN
EPC GaN FETs EPC eGaN FET,65 V, 480 milliohm at 5 V, LGA 2.05 x 0.85 Non-Stocked Lead-Time 18 Weeks
Min.: 1
Mult.: 1
: 2 500

SMD/SMT LGA-6 N-Channel 1 Channel 65 V 2 A 480 mOhms - 4 V, 6 V 2.5 V 133 pC - 40 C + 150 C Enhancement eGaN FET GaN