EPC GaN FETs

Results: 56
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Channel Mode Tradename
EPC GaN FETs 100 V eGaN FET, 5.2 mohm Rdson, 2.3 mm x 1.45 mm, Cu pillar CSP 2 139In Stock
Min.: 1
Mult.: 1
: 2 500

SMD/SMT Die N-Channel 1 Channel 100 V 46 A 5.2 mOhms - 4 V, 6 V 2.5 V 7.3 nC - 40 C + 150 C Enhancement eGaN FET
EPC GaN FETs 100 V eGaN FET, 2 mohm Rdson, 3.23 mm x 2.88 mm, Cu pillar CSP 900In Stock
Min.: 1
Mult.: 1
: 1 000

SMD/SMT Die N-Channel 1 Channel 100 V 126 A 2 mOhms - 4 V, 6 V 2.5 V 20 nC - 40 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN 11 950In Stock
3 000Expected 18/08/2026
Min.: 1
Mult.: 1
: 3 000

SMD/SMT QFN-5 N-Channel 1 Channel 100 V 101 A 1.2 mOhms - 4 V, 6 V 2.5 V 17 nC - 40 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC eGaN FET, 200 V, 5 milliohm at 5 V, 3 mm x 5 mm FCQFN 7 797In Stock
Min.: 1
Mult.: 1
: 3 000

SMD/SMT FCQFN-7 N-Channel 1 Channel 200 V 133 A 5 mOhms - 4 V, 6 V 2.5 V 21 nC - 40 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC eGaN FET,150 V, 2.2 milliohm typ at 5 V, QFN 3 x 5mm 14 845In Stock
Min.: 1
Mult.: 1
: 3 000

SMD/SMT QFN-7 N-Channel 1 Channel 150 V 133 A 2.2 mOhms - 4 V, 6 V 2.5 V 22 nC - 40 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC eGaN FET,100 V, 3.1 milliohm at 5 V, 3 mm x 5 mm QFN 11 648In Stock
Min.: 1
Mult.: 1
: 3 000

SMD/SMT QFN-7 N-Channel 1 Channel 100 V 63 A 3.1 mOhms - 4 V, 6 V 2.5 V 12.3 nC - 40 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC eGaN FET,200 V, 10 milliohm at 5 V, 3 mm x 5 mm QFN 14 634In Stock
Min.: 1
Mult.: 1
: 3 000

SMD/SMT QFN-7 N-Channel 1 Channel 200 V 63 A 10 mOhms - 4 V, 6 V 2.5 V 10.1 nC - 40 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC eGaN FET,100 V, 3.3 milliohm typ at 5 V, LGA 2.5 x 1.5 8 591In Stock
Min.: 1
Mult.: 1
: 2 500

SMD/SMT LGA-6 N-Channel 1 Channel 100 V 29 A 3.3 mOhms - 4 V, 6 V 2.5 V 8.5 nC - 40 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC eGaN FET,100 V, 10.5 milliohm at 5 V, CuPillar 2.15 x 1.25 2 500In Stock
Min.: 1
Mult.: 1
: 2 500

SMD/SMT Die N-Channel 1 100 V 9.4 A 10.5 mOhms - 4 V, 6 V 2.5 V 4.3 nC - 40 C + 150 Enhancement eGaN FET
EPC GaN FETs eGaN FET, 80V, 11milliohm at 5 V, 1.5 x 1.5mm BGA 11 426In Stock
Min.: 1
Mult.: 1
: 2 500

SMD/SMT BGA-9 N-Channel 1 Channel 80 V 8.2 A 11 mOhms - 4 V, 6 V 2.5 V 3.5 nC - 55 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC eGaN FET,80 V, 1.0 milliohm at 5 V, 3 mm x 5 mm QFN 2 289In Stock
18 000Expected 08/12/2026
Min.: 1
Mult.: 1
: 3 000

SMD/SMT QFN-7 N-Channel 1 Channel 80 V 133 A 1 mOhms - 4 V, 6 V 2.5 V 28 nC - 40 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC eGaN FET, 170 V, 9 milliOhm at 5 V, LGA 2.8 x 1.4 14 260In Stock
Min.: 1
Mult.: 1
: 2 500

SMD/SMT LGA-6 N-Channel 1 Channel 170 V 24 A 9 mOhms - 4 V, 6 V 2.5 V 5.7 nC - 40 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC eGaN FET,200 V, 8 milliohm at 5 V, LGA 4.6 x 1.6 10 815In Stock
Min.: 1
Mult.: 1
: 2 500

SMD/SMT LGA-6 N-Channel 1 Channel 200 V 32 A 8 mOhms - 4 V, 6 V 2.5 V 13.6 nC - 40 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5 431In Stock
2 500Expected 21/08/2026
Min.: 1
Mult.: 1
: 2 500

SMD/SMT LGA-6 N-Channel 1 Channel 100 V 29 A 6 mOhms - 4 V, 6 V 2.5 V 5.7 nC - 55 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC eGaN FET,40 V, 16 milliohm at 5 V, LGA 1.7 x 1.1 11 550In Stock
Min.: 1
Mult.: 1
: 2 500

SMD/SMT LGA-5 N-Channel 1 Channel 40 V 10 A 16 mOhms - 4 V, 6 V 2.5 V 2 nC - 40 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC eGaN FET,60 V, 2.6 milliohm at 5 V, BGA 4.6 x 2.6 500In Stock
Min.: 1
Mult.: 1
: 500

SMD/SMT BGA-24 N-Channel 1 60 V 48 A 2.6 mOhms - 4 V, 6 V 2.5 V 16 nC - 40 C + 150 Enhancement eGaN FET
EPC GaN FETs EPC eGaN FET,60 V, 45 milliohm at 5 V, BGA 0.9 x 0.9 4 568In Stock
7 500Expected 12/08/2026
Min.: 1
Mult.: 1
: 2 500

SMD/SMT BGA-4 N-Channel 1 Channel 60 V 1.7 A 45 mOhms - 4 V, 6 V 2.5 V 880 pC - 40 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC eGaN FET,100 V, 73 milliohm at 5 V, BGA 0.9 x 0.9 11 638In Stock
Min.: 1
Mult.: 1
: 2 500

SMD/SMT BGA-4 N-Channel 1 Channel 100 V 1.7 A 73 mOhms - 4 V, 6 V 2.5 V 700 pC - 40 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC eGaN FET,100 V, 3300 milliohm at 5 V, BGA 0.9 x 0.9 10 923In Stock
Min.: 1
Mult.: 1
: 2 500

SMD/SMT BGA-4 N-Channel 1 Channel 100 V 500 mA 3.3 Ohms 6 V 2.5 V 44 pC - 40 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC eGaN FET,15 V, 30 milliohm at 5 V, BGA 0.85 x 1.2 12 698In Stock
Min.: 1
Mult.: 1
: 2 500

SMD/SMT BGA-6 N-Channel 1 Channel 15 V 3.4 A 30 mOhms - 4 V, 6 V 2.5 V 745 pC - 40 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC eGaN FET, 350 V, 80 milliohm at 5 V, BGA 1.95 x 1.95 585In Stock
2 500Expected 08/12/2026
Min.: 1
Mult.: 1
: 2 500

SMD/SMT BGA-12 N-Channel 1 Channel 350 V 6.3 A 80 mOhms - 4 V, 6 V 2.5 V 2.9 nC - 40 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC eGaN FET,100 V, 25 milliohm at 5 V, BGA 1.3 x 0.85 4 500In Stock
Min.: 1
Mult.: 1
: 2 500

SMD/SMT BGA-6 N-Channel 1 Channel 100 V 1.7 A 25 mOhms - 4 V, 6 V 2.5 V 1.8 nC - 40 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC eGaN FET,100 V, 13.5 milliohm at 5 V, BGA 1.5 x 1.5 12 003In Stock
Min.: 1
Mult.: 1
: 2 500

SMD/SMT BGA-6 N-Channel 1 Channel 100 V 8.2 A 13.5 mOhms - 4 V, 6 V 2.5 V 3.5 nC - 40 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC eGaN FET, 40 V, 3.5 mohm at 5 V, LGA 2.5 x 1.5 6 856In Stock
Min.: 1
Mult.: 1
: 2 500

SMD/SMT LGA-6 N-Channel 1 Channel 40 V 29 A 3.5 mOhms - 4 V, 6 V 2.5 V 6.6 nC - 40 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC eGaN FET, 80 V, 3.6 milliohm at 5 V, LGA 3.5 x 1.95 2 766In Stock
Min.: 1
Mult.: 1
: 1 000

SMD/SMT LGA-8 N-Channel 1 Channel 80 V 60 A 3.6 mOhms - 4 V, 6 V 2.5 V 9.4 nC - 40 C + 150 C Enhancement eGaN FET