Coherent High-Speed Indium Phosphide (InP) Photodiodes
Coherent High-Speed Indium Phosphide (InP) Photodiodes are designed for use in next-generation 800G and 1.6T transceivers with 200Gb/s PAM4 optical lanes. These photodiodes offer both singlet and 1x4 array configurations with integrated lenses. These RoHS-compliant devices provide efficient optical coupling and compatibility with all major four-channel and eight-channel transimpedance amplifiers (TIA). The flip-chip pad configurations are engineered to meet the demanding requirements of longwave fiber-optic communication systems, especially data center applications. Coherent High-Speed Indium Phosphide (InP) Photodiodes feature a wide optical response from 900nm to 1650nm, high responsivity at 1310nm, low capacitance of 50fF, and low dark current.Features
- For use in next-generation of 800G and 1.6T transceivers with 200Gb/s PAM4 optical lanes
- Singlet and 1x4 array configurations with integrated lenses
- Efficient optical coupling
- Wide optical response
- High responsivity
- Low capacitance
- Low dark current
- Flip-chip pad configurations
- Compatibility with all major 4-channel and 8-channel TIA
- High bandwidth
- RoHS compliant
Applications
- Longwave fiber-optic communication systems
- Data centers
Specifications
- 900nm to 1650nm optical response
- 1310nm responsivity
- 3dB bandwidth >50GHz
- 50fF capacitance
Published: 2024-11-21
| Updated: 2025-01-07
